The LM25101 high-voltage gate driver is designed to drive both the high-side and the
low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The A version
provides a full 3-A of gate drive while the B and C versions provide 2-A and 1-A, respectively. The
outputs are independently controlled with TTL input thresholds. An integrated high voltage diode is
provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at
high speed while consuming low power and providing clean level transitions from the control logic
to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the
high-side power rails.
These devices are available in the standard 8-pin SOIC, 8-pin SO-PowerPAD, 8-pin WSON,
10-pin WSON, and 8-pin MSOP PowerPAD packages.
The LM25101 high-voltage gate driver is designed to drive both the high-side and the
low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The A version
provides a full 3-A of gate drive while the B and C versions provide 2-A and 1-A, respectively. The
outputs are independently controlled with TTL input thresholds. An integrated high voltage diode is
provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at
high speed while consuming low power and providing clean level transitions from the control logic
to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the
high-side power rails.
These devices are available in the standard 8-pin SOIC, 8-pin SO-PowerPAD, 8-pin WSON,
10-pin WSON, and 8-pin MSOP PowerPAD packages.