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UCC57102Z-Q1

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產品詳細資料

Number of channels 1 Power switch IGBT, MOSFET, SiCFET Peak output current (A) 3 Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 26 Features Short circuit protection, Soft turn-off, Split output Operating temperature range (°C) -40 to 125 Rise time (ns) 8 Fall time (ns) 14 Channel input logic Non-Inverting Rating Automotive Undervoltage lockout (typ) (V) 12 Driver configuration Single
Number of channels 1 Power switch IGBT, MOSFET, SiCFET Peak output current (A) 3 Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 26 Features Short circuit protection, Soft turn-off, Split output Operating temperature range (°C) -40 to 125 Rise time (ns) 8 Fall time (ns) 14 Channel input logic Non-Inverting Rating Automotive Undervoltage lockout (typ) (V) 12 Driver configuration Single
SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm)
  • Qualified for automotive applications
  • AEC-Q100 qualified
    • Device temperature grade 1
  • Typical 3A sink 3A source output currents
  • DESAT protection with programmable delay
  • Soft turn-off when fault happens
  • Absolute maximum VDD voltage: 30V
  • Input and enable pins capable of withstanding up to –5V
  • Tight UVLO thresholds for bias flexibility
  • Typical 26ns propagation delay
  • Self-protect driver with thermal shutdown function
  • Wide bias voltage range
  • Available in 5mm × 4mm SOIC-8 package
  • Operating junction temperature range of –40°C to 150°C
  • Qualified for automotive applications
  • AEC-Q100 qualified
    • Device temperature grade 1
  • Typical 3A sink 3A source output currents
  • DESAT protection with programmable delay
  • Soft turn-off when fault happens
  • Absolute maximum VDD voltage: 30V
  • Input and enable pins capable of withstanding up to –5V
  • Tight UVLO thresholds for bias flexibility
  • Typical 26ns propagation delay
  • Self-protect driver with thermal shutdown function
  • Wide bias voltage range
  • Available in 5mm × 4mm SOIC-8 package
  • Operating junction temperature range of –40°C to 150°C

The UCC57102Z-Q1 is a single channel, high-performance low-side IGBT/SiC gate driver for high power automotive applications such as PTC heaters, traction inverter active discharge circuit, and other auxiliary subsystems. It offers protection features including Under-voltage-lock-out (UVLO), Desaturation protection (DESAT), FAULT report, and thermal shutdown protection. The UCC57102Z-Q1 has a typical peak drive strength of 3A and it can handle –5V on its inputs, which improves robustness in systems with moderate ground bouncing. The inputs are independent of supply voltage and can be connected to most controller outputs for maximum control flexibility. The wide voltage range of the bias supply provided in the UCC57102Z-Q1 accommodates bipolar voltage. An accurate 5V output LDO is also available with the UCC57102Z-Q1 .

The UCC57102Z-Q1 is a single channel, high-performance low-side IGBT/SiC gate driver for high power automotive applications such as PTC heaters, traction inverter active discharge circuit, and other auxiliary subsystems. It offers protection features including Under-voltage-lock-out (UVLO), Desaturation protection (DESAT), FAULT report, and thermal shutdown protection. The UCC57102Z-Q1 has a typical peak drive strength of 3A and it can handle –5V on its inputs, which improves robustness in systems with moderate ground bouncing. The inputs are independent of supply voltage and can be connected to most controller outputs for maximum control flexibility. The wide voltage range of the bias supply provided in the UCC57102Z-Q1 accommodates bipolar voltage. An accurate 5V output LDO is also available with the UCC57102Z-Q1 .

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