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TLE2021B

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Excalibur 高速低功耗精密运算放大器

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TLE2021B

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产品详情

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4 Vos (offset voltage at 25°C) (max) (mV) 0.2 Offset drift (typ) (µV/°C) 2 Input bias current (max) (pA) 70000 GBW (typ) (MHz) 1.7 Slew rate (typ) (V/µs) 0.5 Rail-to-rail In to V- Iq per channel (typ) (mA) 0.2 Vn at 1 kHz (typ) (nV√Hz) 17 CMRR (typ) (dB) 110 Rating Military Operating temperature range (°C) -55 to 125 Iout (typ) (A) 0.003 Architecture Bipolar Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -1 Output swing headroom (to negative supply) (typ) (V) 0.7 Output swing headroom (to positive supply) (typ) (V) -0.7
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4 Vos (offset voltage at 25°C) (max) (mV) 0.2 Offset drift (typ) (µV/°C) 2 Input bias current (max) (pA) 70000 GBW (typ) (MHz) 1.7 Slew rate (typ) (V/µs) 0.5 Rail-to-rail In to V- Iq per channel (typ) (mA) 0.2 Vn at 1 kHz (typ) (nV√Hz) 17 CMRR (typ) (dB) 110 Rating Military Operating temperature range (°C) -55 to 125 Iout (typ) (A) 0.003 Architecture Bipolar Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -1 Output swing headroom (to negative supply) (typ) (V) 0.7 Output swing headroom (to positive supply) (typ) (V) -0.7
CDIP (JG) 8 64.032 mm² 9.6 x 6.67 LCCC (FK) 20 79.0321 mm² 8.89 x 8.89
  • Supply current: 300µA, max
  • High unity-gain bandwidth: 2MHz
  • High slew rate: 0.65V/µs
  • Supply-current change over military temperature range: 10µA at VS = ± 15V
  • Specified for both 5V single-supply and ±15V operation
  • Phase-reversal protection
  • High open-loop gain: 6.5V/µV (136dB)
  • Low offset voltage: 100µV, max
  • Offset voltage drift with time: 0.005µV/mo
  • Low input bias current: 50nA, max
  • Low noise voltage: 19nV/√Hz
  • Supply current: 300µA, max
  • High unity-gain bandwidth: 2MHz
  • High slew rate: 0.65V/µs
  • Supply-current change over military temperature range: 10µA at VS = ± 15V
  • Specified for both 5V single-supply and ±15V operation
  • Phase-reversal protection
  • High open-loop gain: 6.5V/µV (136dB)
  • Low offset voltage: 100µV, max
  • Offset voltage drift with time: 0.005µV/mo
  • Low input bias current: 50nA, max
  • Low noise voltage: 19nV/√Hz

The TLE2021xM, TLE2022xM, and TLE2024xM (TLE202xM) devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21, with a highly improved slew rate and unity-gain bandwidth.

The complementary bipolar Excalibur process uses isolated vertical pnp transistors that yield dramatic improvement in unity-gain bandwidth and slew rate over similar devices.

The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both time and temperature. Therefore, a precision device remains a precision device even with changes in temperature and over years of use.

This combination of excellent dc performance with a common-mode input voltage range that includes the negative rail makes these devices an excellent choice for low-level signal conditioning applications in either single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry that eliminates an unexpected change in output states when one of the inputs is less than the negative supply rail.

A variety of available options includes ceramic DIP and chip-carrier versions for high-density systems applications.

The M-suffix devices are characterized for operation over the full military temperature range of –55°C to +125°C.

The TLE2021xM, TLE2022xM, and TLE2024xM (TLE202xM) devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21, with a highly improved slew rate and unity-gain bandwidth.

The complementary bipolar Excalibur process uses isolated vertical pnp transistors that yield dramatic improvement in unity-gain bandwidth and slew rate over similar devices.

The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both time and temperature. Therefore, a precision device remains a precision device even with changes in temperature and over years of use.

This combination of excellent dc performance with a common-mode input voltage range that includes the negative rail makes these devices an excellent choice for low-level signal conditioning applications in either single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry that eliminates an unexpected change in output states when one of the inputs is less than the negative supply rail.

A variety of available options includes ceramic DIP and chip-carrier versions for high-density systems applications.

The M-suffix devices are characterized for operation over the full military temperature range of –55°C to +125°C.
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类型 标题 下载最新的英语版本 日期
* 数据表 TLE202xM Excalibur, High-Speed, Low-Power, Precision, Operational Amplifiers 数据表 (Rev. E) PDF | HTML 2025年 7月 31日

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包含信息：
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息：
  • 制造厂地点
  • 封装厂地点

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