The UCC218915-Q1 is a galvanically isolated single channel pre-driver designed for SiC MOSFETs and IGBTs up to 1500V DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. The UCC218915-Q1 has dual 2.8A outputs for directly driving an external buffer NMOS/PMOS pair.
The input side is isolated from the output side with SiO2 isolation technology, supporting up to 1.06kVRMS working voltage, 10kVPK surge immunity with longer than 40-years isolation barrier life, as well as providing low part-to-part skew, and >200V/ns common mode noise immunity (CMTI).
The UCC218915-Q1 includes state-of-art protection features, such as fast overcurrent and short circuit detection, controlled soft shutdown after a fault, fault reporting, active Miller clamp, active short circuit input on the high-voltage side and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness.
The UCC218915-Q1 is a galvanically isolated single channel pre-driver designed for SiC MOSFETs and IGBTs up to 1500V DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. The UCC218915-Q1 has dual 2.8A outputs for directly driving an external buffer NMOS/PMOS pair.
The input side is isolated from the output side with SiO2 isolation technology, supporting up to 1.06kVRMS working voltage, 10kVPK surge immunity with longer than 40-years isolation barrier life, as well as providing low part-to-part skew, and >200V/ns common mode noise immunity (CMTI).
The UCC218915-Q1 includes state-of-art protection features, such as fast overcurrent and short circuit detection, controlled soft shutdown after a fault, fault reporting, active Miller clamp, active short circuit input on the high-voltage side and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness.