产品详情

Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM, SPI Gate drive (A) 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 65 Features Current sense Amplifier, Phase Comparators, SPI/I2C, Watchdog timer Operating temperature range (°C) -40 to 125 TI functional safety category Functional Safety-Compliant
Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM, SPI Gate drive (A) 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 65 Features Current sense Amplifier, Phase Comparators, SPI/I2C, Watchdog timer Operating temperature range (°C) -40 to 125 TI functional safety category Functional Safety-Compliant
HTQFP (PHP) 48 81 mm² 9 x 9
  • AEC-Q100 qualified for automotive applications. Temperature options:
    • DRV8334EPHP: –40°C to +150°C, TA
    • DRV8334QPHP: –40°C to +125°C,TA
  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 4.5 to 60V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external protection circuits
  • Smart Gate Drive architecture
    • 45-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
    • Three-step dynamic drive current control
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • Sub-1mV low input offset across temperature
    • 9-level adjustable gain
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • 6x, 3x, 1x, and Independent PWM Modes
  • Supports 3.3V, and 5V Logic Inputs
  • Optional programmable OTP for reset settings
  • Integrated protection features
    • Battery and power supply voltage monitors
    • Phase feedback comparator
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Device thermal warning and shutdown
    • Fault condition indicator pin
  • AEC-Q100 qualified for automotive applications. Temperature options:
    • DRV8334EPHP: –40°C to +150°C, TA
    • DRV8334QPHP: –40°C to +125°C,TA
  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 4.5 to 60V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external protection circuits
  • Smart Gate Drive architecture
    • 45-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
    • Three-step dynamic drive current control
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • Sub-1mV low input offset across temperature
    • 9-level adjustable gain
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • 6x, 3x, 1x, and Independent PWM Modes
  • Supports 3.3V, and 5V Logic Inputs
  • Optional programmable OTP for reset settings
  • Integrated protection features
    • Battery and power supply voltage monitors
    • Phase feedback comparator
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Device thermal warning and shutdown
    • Fault condition indicator pin

The DRV8334-Q1 is an integrated smart gate driver for 12V and 24V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8334-Q1 generates the correct gate drive voltages using an integrated bootstrap diode and a GVDD charge pump. The Smart Gate Drive architecture supports configurable peak gate drive current from 0.8mA up to 1A source and 2A sink. The DRV8334-Q1 can operate from a single power supply with a wide input range of 4.5 to 60V. A trickle charge pump enables 100% PWM duty cycle control, and provides overdrive supply voltage for external switches.

The DRV8334-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurement.

A wide range of diagnostics and protection features integrated in the DRV8334-Q1 enable a robust motor drive system design and help eliminate the needs of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

The DRV8334-Q1 is an integrated smart gate driver for 12V and 24V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8334-Q1 generates the correct gate drive voltages using an integrated bootstrap diode and a GVDD charge pump. The Smart Gate Drive architecture supports configurable peak gate drive current from 0.8mA up to 1A source and 2A sink. The DRV8334-Q1 can operate from a single power supply with a wide input range of 4.5 to 60V. A trickle charge pump enables 100% PWM duty cycle control, and provides overdrive supply voltage for external switches.

The DRV8334-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurement.

A wide range of diagnostics and protection features integrated in the DRV8334-Q1 enable a robust motor drive system design and help eliminate the needs of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

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类型 标题 下载最新的英语版本 日期
* 数据表 DRV8334-Q1 Automotive 24/12V Battery 3-Phase Gate Driver Unit with accurate current sensing and enhanced diagnostics 数据表 PDF | HTML 2023年 5月 17日
应用手册 所选封装材料的热学和电学性质 2008年 10月 16日

设计和开发

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评估板

DRV8334EVM — DRV8334 三相栅极驱动器评估模块

DRV8334 评估模块 (EVM) 是一款基于 DRV8334 栅极驱动器(适用于 BLDC 电机)的 30A 三相无刷直流驱动级。该 EVM 可快速评估 DRV8334 器件,该器件通过梯形换向和控制来旋转 BLDC 电机。包含所有电源的状态 LED 以及故障 LED,用于提供用户反馈。需要使用 C2000™ LaunchPad™ 开发套件 (LAUNCHXL-F280049C) 来控制 DRV8334 以及监测和报告故障。
用户指南: PDF | HTML
英语版: PDF | HTML
TI.com 上无现货
计算工具

DRV8334-SMART-GATE-DRIVE-REGISTER-SETTINGS-CALC Calculator to provide recommended smart gate drive register settings for the DRV8334

This calculator provides initial recommendations for smart gate drive register configurations for the DRV8334 based on user inputs.
支持的产品和硬件

支持的产品和硬件

产品
BLDC 驱动器
DRV8334 具有精确电流检测功能的 60V、1000mA 至 2000mA 三相栅极驱动器 DRV8334-Q1 具有精确电流检测功能的汽车级 12V 和 24V 电池三相栅极驱动器单元
封装 引脚 CAD 符号、封装和 3D 模型
HTQFP (PHP) 48 Ultra Librarian

订购和质量

包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息:
  • 制造厂地点
  • 封装厂地点

支持和培训

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