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UCC27332-Q1

ACTIVE

Automotive 20V VDD, 9A/9A single-channel driver and enable

Product details

Number of channels 1 Power switch IGBT, MOSFET Peak output current (A) 9 Input supply voltage (min) (V) 4 Input supply voltage (max) (V) 18 Features Enable pin Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 9 Propagation delay time (µs) 0.025 Input threshold CMOS, TTL Channel input logic Non-Inverting Input negative voltage (V) -5 Rating Automotive Driver configuration Non-Inverting
Number of channels 1 Power switch IGBT, MOSFET Peak output current (A) 9 Input supply voltage (min) (V) 4 Input supply voltage (max) (V) 18 Features Enable pin Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 9 Propagation delay time (µs) 0.025 Input threshold CMOS, TTL Channel input logic Non-Inverting Input negative voltage (V) -5 Rating Automotive Driver configuration Non-Inverting
HVSSOP (DGN) 8 14.7 mm² (3 mm × 4.9 mm)
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 1: –40°C to +125°C ambient Operating Temperature Range
    • Device HBM ESD classification level H2
    • Device CDM ESD classification level C4B
  • Industry-standard pin-out
  • Typical 9-A sink, 9-A source output currents
  • Input pin capable of withstanding up to –5 V
  • Absolute maximum VDD voltage: 20 V
  • Wide VDD operating range from 4.5 V to 18 V
  • Available in 3-mm x 3-mm MSOP8 package
  • Typical 25-ns propagation delay
  • TTL compatible input thresholds
  • Operating junction temperature range of –40°C to 125°C
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 1: –40°C to +125°C ambient Operating Temperature Range
    • Device HBM ESD classification level H2
    • Device CDM ESD classification level C4B
  • Industry-standard pin-out
  • Typical 9-A sink, 9-A source output currents
  • Input pin capable of withstanding up to –5 V
  • Absolute maximum VDD voltage: 20 V
  • Wide VDD operating range from 4.5 V to 18 V
  • Available in 3-mm x 3-mm MSOP8 package
  • Typical 25-ns propagation delay
  • TTL compatible input thresholds
  • Operating junction temperature range of –40°C to 125°C

The UCC27332-Q1 is a single channel, high-speed, low-side gate driver capable of effectively driving MOSFET and GaN power switches. UCC27332-Q1 has a typical peak drive strength of 9-A, which reduces the rise and fall times of the power switches, lowering switching losses and increasing efficiency. The UCC27332-Q1 device’s small propagation delay yields better power stage efficiency by improving the dead time optimization, pulse width utilization, control loop response, and transient performance of the system.

UCC27332-Q1 can handle –5-V on its input, which improves robustness in systems with moderate ground bouncing. An independent enable signal allows the power stage to be controlled independent of the main control logic. The gate driver can quickly shut off the power stage if there is a fault in the system (which requires the power train to be turned-off). The enable function also improves system robustness. Many high-frequency switching power supplies exhibit high frequency noise at the gate of the power device, which can get injected into the output pin of the gate driver and can cause the driver to malfunction. The UCC27332-Q1 performs well in such conditions due to its transient reverse current and reverse voltage capability.

The strong internal pulldown MOSFET holds the output low if the VDD voltage is below the specified power on reset threshold. This active pulldown feature further improves system robustness. The small 3-mm × 3mm MSOP package enables optimum gate driver placement and inproved layout. This small package also enables optimum gate driver placement and improved layout.

The UCC27332-Q1 is a single channel, high-speed, low-side gate driver capable of effectively driving MOSFET and GaN power switches. UCC27332-Q1 has a typical peak drive strength of 9-A, which reduces the rise and fall times of the power switches, lowering switching losses and increasing efficiency. The UCC27332-Q1 device’s small propagation delay yields better power stage efficiency by improving the dead time optimization, pulse width utilization, control loop response, and transient performance of the system.

UCC27332-Q1 can handle –5-V on its input, which improves robustness in systems with moderate ground bouncing. An independent enable signal allows the power stage to be controlled independent of the main control logic. The gate driver can quickly shut off the power stage if there is a fault in the system (which requires the power train to be turned-off). The enable function also improves system robustness. Many high-frequency switching power supplies exhibit high frequency noise at the gate of the power device, which can get injected into the output pin of the gate driver and can cause the driver to malfunction. The UCC27332-Q1 performs well in such conditions due to its transient reverse current and reverse voltage capability.

The strong internal pulldown MOSFET holds the output low if the VDD voltage is below the specified power on reset threshold. This active pulldown feature further improves system robustness. The small 3-mm × 3mm MSOP package enables optimum gate driver placement and inproved layout. This small package also enables optimum gate driver placement and improved layout.

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Design & development

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HVSSOP (DGN) 8 Ultra Librarian

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