This reference design describes a 3.5kW highvoltage to low-voltage DC-DC converter with 650V Gallium nitride (GaN) high-electron mobility transistors (HEMT). Using LMG3522R030 as primary switches makes the converter work at a high switching frequency. In this design, the converter uses a smaller size transformer. To ease the thermal performance of active clamping metal-oxide semiconductor fieldeffect transistors (MOSFETs), the converter uses twochannel active clamping circuits.
| Output voltage options | PMP41078.1 |
|---|---|
| Vin (Min) (V) | 200 |
| Vin (Max) (V) | 450 |
| Vout (Nom) (V) | 14 |
| Iout (Max) (A) | 250 |
| Output Power (W) | 3500 |
| Isolated/Non-Isolated | Isolated |
| Input Type | DC |
| Topology | Full Bridge- Phase Shifted |
A fully assembled board has been developed for testing and performance validation only, and is not available for sale.
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Test results for the reference design, including efficiency graphs, test prerequisites and more
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Includes TI products in the design and potential alternatives.
| Type | Title | Date | ||
|---|---|---|---|---|
| * | Test report | High-Voltage to Low-Voltage DC-DC Converter Reference Design With GaN HEMT (Rev. A) | PDF | HTML | Dec 9, 2024 |
| Technical article | Design an active clamp circuit for rectifiers at a high switching frequency | Jul 29, 2025 |
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