The LMG352xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
The LMG352xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3526R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.The LMG3527R030 includes the zero-current detection (ZCD) feature which provides a pulse output from the ZCD pin when a positive drain-to-source current is detected .
Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.
| Top documentation | Type | Title | Format options | Date |
|---|---|---|---|---|
| * | Data sheet | LMG352xR030 650 V 30 mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting datasheet (Rev. B) | PDF | HTML | Jan 23, 2025 |
| Product overview | HVDC QFN-Packaged GaN Power Devices | PDF | HTML | Mar 31, 2026 | |
| Application note | Design Consideration of 3-Level Flying Capacitor Converters for Three-Phase AC/DC Applications | PDF | HTML | Jan 12, 2026 | |
| Application note | Implementation of Single-Phase Off-Grid Inverter With Digital Control Using PLECS Simulation | PDF | HTML | Apr 15, 2024 | |
| Technical article | Load transient testing with high slew rates | PDF | HTML | Dec 19, 2023 | |
| Analog design Journal | Solving AC dropout recovery in a high-density GaN-optimized PFC converter | PDF | HTML | Sep 19, 2023 | |
| Technical article | The benefits of GaN for battery test systems | PDF | HTML | Oct 7, 2022 |
For additional terms or required resources, click any title below to view the detail page where available.
LMG3522EVM-042 configures two LMG3522R030 GaN FETs in a half bridge with the cycle-by-cycle over current protection, latched short circuit protection function and all the necessary auxiliary peripheral circuitry. This EVM is designed to work in conjunction with larger systems.
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| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| VQFN (RQS) | 52 | Ultra Librarian |
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