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CSD85301Q2

ACTIVE

20-V, N channel NexFET™ power MOSFET, dual SON 2 mm x 2 mm, 27 mOhm, gate ESD protection

Product details

VDS (V) 20 VGS (V) 10 Type N-channel Configuration Dual Rds(on) at VGS=4.5 V (max) (mΩ) 27 Rds(on) at VGS=2.5 V (max) (mΩ) 39 VGSTH typ (typ) (V) 0.9 QG (typ) (nC) 4.2 QGD (typ) (nC) 1 QGS (typ) (nC) 1.1 ID - silicon limited at TC=25°C (A) 5 ID - package limited (A) 5 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
VDS (V) 20 VGS (V) 10 Type N-channel Configuration Dual Rds(on) at VGS=4.5 V (max) (mΩ) 27 Rds(on) at VGS=2.5 V (max) (mΩ) 39 VGSTH typ (typ) (V) 0.9 QG (typ) (nC) 4.2 QGD (typ) (nC) 1 QGS (typ) (nC) 1.1 ID - silicon limited at TC=25°C (A) 5 ID - package limited (A) 5 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
WSON (DLV) 6 4 mm² (2 mm × 2 mm)
  • Low on-resistance
  • Dual independent MOSFETs
  • Space saving SON 2mm × 2mm plastic package
  • Optimized for 5V gate driver
  • Avalanche rated
  • Pb and halogen free
  • RoHS compliant
  • Low on-resistance
  • Dual independent MOSFETs
  • Space saving SON 2mm × 2mm plastic package
  • Optimized for 5V gate driver
  • Avalanche rated
  • Pb and halogen free
  • RoHS compliant

The CSD85301Q2 is a 20V, 23mΩ N-Channel device with dual independent MOSFETs in a SON 2mm x 2mm plastic package. The two FETs were designed to be used in a half bridge configuration for synchronous buck and other power supply applications. Additionally, this part can be used for adaptor, USB input protection and battery charging applications. The dual FETs feature low drain to source on-resistance that minimizes losses and offers low component count for space constrained applications.

The CSD85301Q2 is a 20V, 23mΩ N-Channel device with dual independent MOSFETs in a SON 2mm x 2mm plastic package. The two FETs were designed to be used in a half bridge configuration for synchronous buck and other power supply applications. Additionally, this part can be used for adaptor, USB input protection and battery charging applications. The dual FETs feature low drain to source on-resistance that minimizes losses and offers low component count for space constrained applications.

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Technical documentation

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Top documentation Type Title Format options Date
* Data sheet CSD85301Q2 20V Dual N-Channel NexFET Power MOSFETs datasheet (Rev. A) PDF | HTML May 21, 2024
Application brief Estimating Leakage Currents of Power MOSFETs PDF | HTML Oct 31, 2025
Application note MOSFET Support and Training Tools (Rev. G) PDF | HTML Oct 27, 2025
Application note Semiconductor and IC Package Thermal Metrics (Rev. D) PDF | HTML Mar 25, 2024
Application note Using MOSFET Transient Thermal Impedance Curves In Your Design PDF | HTML Dec 18, 2023
Application note QFN and SON PCB Attachment (Rev. C) PDF | HTML Dec 6, 2023
Application note Using MOSFET Safe Operating Area Curves in Your Design PDF | HTML Mar 13, 2023
Application brief Tips for Successfully Paralleling Power MOSFETs PDF | HTML May 31, 2022
Application note Ringing Reduction Techniques for NexFET High Performance MOSFETs Nov 16, 2011

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