ホーム アンプ オペアンプ (OP アンプ) 汎用オペアンプ

TLC271B

アクティブ

シングル、16V、2MHz、2mV のオフセット電圧、入力電圧から V- までの電圧範囲に対応するオペアンプ

この製品には新バージョンがあります。

open-in-new 代替品と比較
比較対象デバイスのアップグレード版機能を搭載した、ドロップイン代替製品
TLV9101 アクティブ シングル、16V、1.1MHz、低消費電力オペアンプ Rail-to-rail I/O, faster slew rate (4.5 V/μs), lower offset voltage (1.5 mV), lower power (0.12 mA), higher output current (80 mA)
TLV9151 アクティブ シングル、16V、4.5MHz、低消費電力オペアンプ Rail-to-rail I/O, higher GBW (4.5 MHz), faster slew rate (21 V/μs), lower offset voltage (0.75 mV), lower power (0.56 mA), lower noise (10.8 nV/√Hz), higher output current (75 mA)

製品詳細

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 3 Rail-to-rail In to V- GBW (typ) (MHz) 2 Slew rate (typ) (V/µs) 3.6 Vos (offset voltage at 25°C) (max) (mV) 2 Iq per channel (typ) (mA) 0.675 Vn at 1 kHz (typ) (nV√Hz) 25 Rating Catalog Operating temperature range (°C) -40 to 85 Offset drift (typ) (µV/°C) 1.8 Features Shutdown Input bias current (max) (pA) 60 CMRR (typ) (dB) 80 Iout (typ) (A) 0.01 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -0.8 Output swing headroom (to negative supply) (typ) (V) 0.03 Output swing headroom (to positive supply) (typ) (V) -1.2
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 3 Rail-to-rail In to V- GBW (typ) (MHz) 2 Slew rate (typ) (V/µs) 3.6 Vos (offset voltage at 25°C) (max) (mV) 2 Iq per channel (typ) (mA) 0.675 Vn at 1 kHz (typ) (nV√Hz) 25 Rating Catalog Operating temperature range (°C) -40 to 85 Offset drift (typ) (µV/°C) 1.8 Features Shutdown Input bias current (max) (pA) 60 CMRR (typ) (dB) 80 Iout (typ) (A) 0.01 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -0.8 Output swing headroom (to negative supply) (typ) (V) 0.03 Output swing headroom (to positive supply) (typ) (V) -1.2
PDIP (P) 8 92.5083 mm² 9.81 x 9.43 SOIC (D) 8 29.4 mm² 4.9 x 6 SOP (PS) 8 48.36 mm² 6.2 x 7.8
  • Input Offset Voltage Drift...Typically
    0.1 uV/Month, Including the First 30 Days
  • Wide Range of Supply Voltages Over Specified Temperature Range:
  • 0°C to 70°C...3 V to 16 V
  • -40°C to 85°C...4 V to 16 V
  • -55°C to 125°C...5 V to 16 V
  • Single-Supply Operation
  • Common-Mode Input Voltage Range Extends Below the Negative Rail (C-Suffix and I-Suffix Types)
  • Low Noise...25 nV/Hz\ Typically at
    f = 1 kHz (High-Bias Mode)
  • Output Voltage Range Includes Negative Rail
  • High Input Impedance...1012 Typ
  • ESD-Protection Circuitry
  • Small-Outline Package Option Also Available in Tape and Reel
  • Designed-In Latch-Up Immunity

LinCMOS is a trademark of Texas Instruments.

  • Input Offset Voltage Drift...Typically
    0.1 uV/Month, Including the First 30 Days
  • Wide Range of Supply Voltages Over Specified Temperature Range:
  • 0°C to 70°C...3 V to 16 V
  • -40°C to 85°C...4 V to 16 V
  • -55°C to 125°C...5 V to 16 V
  • Single-Supply Operation
  • Common-Mode Input Voltage Range Extends Below the Negative Rail (C-Suffix and I-Suffix Types)
  • Low Noise...25 nV/Hz\ Typically at
    f = 1 kHz (High-Bias Mode)
  • Output Voltage Range Includes Negative Rail
  • High Input Impedance...1012 Typ
  • ESD-Protection Circuitry
  • Small-Outline Package Option Also Available in Tape and Reel
  • Designed-In Latch-Up Immunity

LinCMOS is a trademark of Texas Instruments.

The TLC271 operational amplifier combines a wide range of input offset voltage grades with low offset voltage drift and high input impedance. In addition, the TLC271 offers a bias-select mode that allows the user to select the best combination of power dissipation and ac performance for a particular application. These devices use Texas Instruments silicon-gate LinCMOSTM technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.

Using the bias-select option, these cost-effective devices can be programmed to span a wide range of applications that previously required BiFET, NFET, or bipolar technology. Three offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC271 (10 mV) to the TLC271B (2 mV) low-offset version. The extremely high input impedance and low bias currents, in conjunction with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.

In general, many features associated with bipolar technology are available in LinCMOSTM operational amplifiers, without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are all easily designed with the TLC271. The devices also exhibit low-voltage single-supply operation, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.

A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density system applications.

The device inputs and output are designed to withstand -100-mA surge currents without sustaining latch-up.

The TLC271 incorporates internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.

The TLC271 operational amplifier combines a wide range of input offset voltage grades with low offset voltage drift and high input impedance. In addition, the TLC271 offers a bias-select mode that allows the user to select the best combination of power dissipation and ac performance for a particular application. These devices use Texas Instruments silicon-gate LinCMOSTM technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.

Using the bias-select option, these cost-effective devices can be programmed to span a wide range of applications that previously required BiFET, NFET, or bipolar technology. Three offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC271 (10 mV) to the TLC271B (2 mV) low-offset version. The extremely high input impedance and low bias currents, in conjunction with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.

In general, many features associated with bipolar technology are available in LinCMOSTM operational amplifiers, without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are all easily designed with the TLC271. The devices also exhibit low-voltage single-supply operation, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.

A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density system applications.

The device inputs and output are designed to withstand -100-mA surge currents without sustaining latch-up.

The TLC271 incorporates internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.

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種類 タイトル 最新の英語版をダウンロード 日付
* データシート LinCMOS Programmable Low-Power Operational Amplifiers データシート (Rev. D) 2001年 3月 26日

購入と品質

記載されている情報:
  • RoHS
  • REACH
  • デバイスのマーキング
  • リード端子の仕上げ / ボールの原材料
  • MSL 定格 / ピーク リフロー
  • MTBF/FIT 推定値
  • 使用原材料
  • 認定試験結果
  • 継続的な信頼性モニタ試験結果
記載されている情報:
  • ファブの拠点
  • 組み立てを実施した拠点

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