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UCC5350L-Q1

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适用于 SiC/IGBT 扩展封装的汽车级 ±10A 单通道隔离式栅极驱动器

产品详情

Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 7000 Power switch IGBT, SiCFET Peak output current (A) 10 Features Active miller clamp Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 9.5 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 15 Propagation delay time (µs) 0.065 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 990 Rise time (ns) 10 Fall time (ns) 10 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 7000 Power switch IGBT, SiCFET Peak output current (A) 10 Features Active miller clamp Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 9.5 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 15 Propagation delay time (µs) 0.065 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 990 Rise time (ns) 10 Fall time (ns) 10 Undervoltage lockout (typ) (V) 12
SOIC (DWL) 8 106.24 mm² 6.4 x 16.6
  • 5kVRMS single-channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
    • Temperature Grade 1
  • Miller clamp, 12V UVLO
  • ±10A typical peak current drive strength
  • 3V to 15V input supply voltage
  • Up to 30V driver supply voltage
  • 100V/ns minimum CMTI
  • Negative 5V handling capability on input pins
  • 100ns (maximum) propagation delay and <25ns part-to-part skew
  • 8-pin DWL (15.7mm creepage)
  • Isolation barrier life > 40 Years
  • Safety-related certifications planned:
    • UL 1577 Component Recognition program
    • DIN EN IEC 60747-17 (VDE 0884-17)
    • CQC - GB4943.1
  • CMOS inputs
  • Operating junction temperature: –40°C to +150°C
  • 5kVRMS single-channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
    • Temperature Grade 1
  • Miller clamp, 12V UVLO
  • ±10A typical peak current drive strength
  • 3V to 15V input supply voltage
  • Up to 30V driver supply voltage
  • 100V/ns minimum CMTI
  • Negative 5V handling capability on input pins
  • 100ns (maximum) propagation delay and <25ns part-to-part skew
  • 8-pin DWL (15.7mm creepage)
  • Isolation barrier life > 40 Years
  • Safety-related certifications planned:
    • UL 1577 Component Recognition program
    • DIN EN IEC 60747-17 (VDE 0884-17)
    • CQC - GB4943.1
  • CMOS inputs
  • Operating junction temperature: –40°C to +150°C

The UCC5350L-Q1 is a single-channel, isolated gate driver with 10A source and 10A sink typical peak current designed to drive MOSFETs, IGBTs, and SiC MOSFETs. The UCC5350L-Q1 has the option for Miller clamp. The CLAMP pin is used to connect the transistor gate to an internal FET besides the output to prevent false turn-on caused by Miller current. The UCC5350L-Q1 is available in a 14mm wide body SOIC-8 (DWL) package and can support isolation voltage up to 5kVRMS. The input side is isolated from the output side with SiO2 capacitive isolation technology with longer than 40 years isolation barrier lifetime. The UCC5350L-Q1 is a good fit for driving IGBTs or MOSFETs in applications such as high-voltage traction inverters and on-board chargers. Compared to an optocoupler, the device has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI.

The UCC5350L-Q1 is a single-channel, isolated gate driver with 10A source and 10A sink typical peak current designed to drive MOSFETs, IGBTs, and SiC MOSFETs. The UCC5350L-Q1 has the option for Miller clamp. The CLAMP pin is used to connect the transistor gate to an internal FET besides the output to prevent false turn-on caused by Miller current. The UCC5350L-Q1 is available in a 14mm wide body SOIC-8 (DWL) package and can support isolation voltage up to 5kVRMS. The input side is isolated from the output side with SiO2 capacitive isolation technology with longer than 40 years isolation barrier lifetime. The UCC5350L-Q1 is a good fit for driving IGBTs or MOSFETs in applications such as high-voltage traction inverters and on-board chargers. Compared to an optocoupler, the device has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI.

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* 数据表 UCC5350L-Q1 Single-Channel Isolated Gate Driver for SiC/IGBT and Automotive Applications 数据表 PDF | HTML 2025年 3月 17日

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