UCC27735-Q1
- AEC-Q100 qualified for automotive applications
- Device temperature grade 1
- High-side, low-side configuration, with independent inputs
- Maximum bootstrap voltage of +700V (HB pin)
- Peak output current of 4A sink, 3.5A source
- Typical 32ns propagation delay
- Propagation delay matching between HO/LO within 6ns maximum
- VDD bias supply range of 10V to 21V
- Input pins capable of handling –6V
- Floating channel designed for bootstrap operation
- 200V/ns maximum common-mode transient immunity on HS pin
- Input interlocking function (UCC2773x-Q1)
- Built-in 8V Undervoltage Lockout (UVLO) for both channels
- SOIC 14-pin package, SOIC 8-pin package
The UCC2773x-Q1 is a 700V half-bridge gate driver with 3.5A source and 4A sink current capability, targeted to drive power MOSFETs and IGBTs. The device comprises of one ground-referenced channel (LO) and one floating channel (HO) which is designed to drive half-bridge configured MOSFETs and IGBTs operating with bootstrap supplies. The device features robust drive with excellent noise and transient immunity including large negative voltage tolerance on its inputs, high dV/dt tolerance, wide negative transient safe operating area (NTSOA) on the switch node (HS), and interlock.
The device accepts a wide range of bias supply input from 10V to 21V and offers UVLO protection for both the VDD and HB bias supply pins. The UCC2773x-Q1 is available in various packages and is rated to operate from –40°C to 150°C.
技术文档
类型 | 标题 | 下载最新的英语版本 | 日期 | |||
---|---|---|---|---|---|---|
* | 数据表 | UCC2773x-Q1 High-Speed, Automotive 700V Half-Bridge Gate Drivers with 3.5A, 4A Drive Strength and up to 200V/ns Noise Immunity 数据表 (Rev. A) | PDF | HTML | 2025年 9月 30日 | ||
EVM 用户指南 | UCC27735Q1EVM User's Guide | PDF | HTML | 2025年 9月 8日 | |||
证书 | UCC27735Q1EVM EU Declaration of Conformity (DoC) | 2025年 7月 1日 |
设计和开发
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