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EMB1412

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MOSFET 栅极驱动器

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open-in-new 比较替代产品
功能与比较器件相同，但引脚排列有所不同
UCC27624 正在供货 30V VDD, 10A/10A dual-channel low-side driver with 4V UVLO and low propagation delay More recent driver with higher supply voltage capability

EMB1412

正在供货
数据表 立即订购

产品详情

Rating Catalog Features MOSFET Gate Driver Device type Cell monitor and balancer Operating temperature range (°C) -40 to 125
Rating Catalog Features MOSFET Gate Driver Device type Cell monitor and balancer Operating temperature range (°C) -40 to 125
HVSSOP (DGN) 8 14.7 mm² 3 x 4.9
  • Compound CMOS and Bipolar Outputs Reduce
    Output Current Variation
  • 7 A Sink/3 A Source Current
  • Fast Propagation Times (25 ns Typical)
  • Fast Rise and Fall Times (14 ns/12 ns Rise
    Fall with 2 nF Load)
  • Inverting and Non-Inverting Inputs Provide
    Either Configuration with a Single Device
  • Supply Rail Under-Voltage Lockout Protection
  • Dedicated Input Ground (IN_REF) for Split
    Supply or Single Supply Operation
  • Thermally Enhanced 8-Pin VSSOP Package
  • Output Swings from VCC to VEE Which can
    be Negative Relative to Input Ground
  • Compound CMOS and Bipolar Outputs Reduce
    Output Current Variation
  • 7 A Sink/3 A Source Current
  • Fast Propagation Times (25 ns Typical)
  • Fast Rise and Fall Times (14 ns/12 ns Rise
    Fall with 2 nF Load)
  • Inverting and Non-Inverting Inputs Provide
    Either Configuration with a Single Device
  • Supply Rail Under-Voltage Lockout Protection
  • Dedicated Input Ground (IN_REF) for Split
    Supply or Single Supply Operation
  • Thermally Enhanced 8-Pin VSSOP Package
  • Output Swings from VCC to VEE Which can
    be Negative Relative to Input Ground

The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.

The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
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类型 标题 下载最新的英语版本 日期
* 数据表 EMB1412 MOSFET Gate Driver 数据表 (Rev. B) PDF | HTML 2014年 11月 20日
应用简报 了解峰值源电流和灌电流 (Rev. A) 英语版 (Rev.A) 2020年 4月 29日
应用简报 适用于栅极驱动器的外部栅极电阻器设计指南 (Rev. A) 英语版 (Rev.A) 2020年 4月 29日

设计和开发

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评估板

UCC27423-4-5-Q1EVM — UCC2742xQ1 具有使能端的双路 4A 高速低侧 MOSFET 驱动器评估模块 (EVM)

UCC2742xQ1 EVM 是一款高速双 MOSFET 评估模块，提供了用于快速、轻松启动 UCC2742xQ1 驱动器的测试平台。评估模块由 4V 至 15V 外部单电源供电，配有一整套测试点和跳线。所有器件均采用单独的输入和输出线路，且共享一个公共接地。评估模块具备使能 (ENBL) 功能，旨在更好地控制驱动器应用的运行，器件的驱动器信号可通过同一使能引脚启用或禁用。
用户指南: PDF
TI.com 上无现货
封装 引脚 CAD 符号、封装和 3D 模型
HVSSOP (DGN) 8 Ultra Librarian
应遵守 TI 评估类商品的标准条款与条件。

订购和质量

包含信息：
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息：
  • 制造厂地点
  • 封装厂地点

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