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UCC27614

ACTIVE

30V VDD, 10A/10A single-channel low-side driver with 4V UVLO and low propagation delay

Product details

Number of channels 1 Power switch IGBT, MOSFET Peak output current (A) 10 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 26 Features Enable pin, UVLO Operating temperature range (°C) -40 to 150 Rise time (ns) 5 Fall time (ns) 4 Propagation delay time (µs) 0.017 Input threshold CMOS, TTL Channel input logic CMOS, TTL Input negative voltage (V) -10 Rating Catalog Undervoltage lockout (typ) (V) 4 Driver configuration Single
Number of channels 1 Power switch IGBT, MOSFET Peak output current (A) 10 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 26 Features Enable pin, UVLO Operating temperature range (°C) -40 to 150 Rise time (ns) 5 Fall time (ns) 4 Propagation delay time (µs) 0.017 Input threshold CMOS, TTL Channel input logic CMOS, TTL Input negative voltage (V) -10 Rating Catalog Undervoltage lockout (typ) (V) 4 Driver configuration Single
SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm) WSON (DSG) 8 4 mm² (2 mm × 2 mm)
  • Typical 10-A sink 10-A source output currents
  • Input and enable pins capable of withstanding up to –10 V
  • Absolute maximum VDD voltage: 30 V
  • Wide VDD operating range from 4.5 V to 26 V with UVLO
  • Available in 2-mm x 2-mm SON8 package
  • Typical 17.5-ns propagation delay
  • EN (enable) pin in SOIC8 package
  • IN– pin can be used for enable/disable functionality
  • VDD independent input thresholds (TTL compatible)
  • Can be used as inverting or non-inverting driver
  • Operating junction temperature range of –40°C to 150°C
  • Typical 10-A sink 10-A source output currents
  • Input and enable pins capable of withstanding up to –10 V
  • Absolute maximum VDD voltage: 30 V
  • Wide VDD operating range from 4.5 V to 26 V with UVLO
  • Available in 2-mm x 2-mm SON8 package
  • Typical 17.5-ns propagation delay
  • EN (enable) pin in SOIC8 package
  • IN– pin can be used for enable/disable functionality
  • VDD independent input thresholds (TTL compatible)
  • Can be used as inverting or non-inverting driver
  • Operating junction temperature range of –40°C to 150°C

The UCC27614 is a single channel, high-speed, low-side gate driver capable of effectively driving MOSFET, IGBT, SiC, and GaN power switches. UCC27614 has a typical peak drive strength of 10 A, which reduces the rise and fall times of the power switches, lowering switching losses and increasing efficiency. The UCC27614 device’s small propagation delay yields better power stage efficiency by improving the dead-time optimization, pulse width utilization, control loop response, and transient performance of the system.

UCC27614 can handle –10-V on its inputs, which improves robustness in systems with moderate ground bouncing. The inputs are independent of supply voltage and can be connected to most controller outputs for maximum control flexibility. An independent enable signal allows the power stage to be controlled independent of the main control logic. The gate driver can quickly shut off the power stage if there is a fault in the system (which requires the power train to be turned-off). The enable function also improves system robustness. Many high-frequency switching power supplies exhibit high frequency noise at the gate of the power device, which can get injected into the output pin of the gate driver and can cause the driver to malfunction. The UCC27614 performs well in such conditions due to its transient reverse current and reverse voltage capability.

The strong internal pulldown MOSFET holds the output low if the VDD voltage is below the specified UVLO threshold. This active pulldown feature further improves system robustness. The UCC27614 device’s 10-A drive current in the 2-mm × 2mm package improves system power density. This small package also enables optimum gate driver placement and improved layout.

The UCC27614 is a single channel, high-speed, low-side gate driver capable of effectively driving MOSFET, IGBT, SiC, and GaN power switches. UCC27614 has a typical peak drive strength of 10 A, which reduces the rise and fall times of the power switches, lowering switching losses and increasing efficiency. The UCC27614 device’s small propagation delay yields better power stage efficiency by improving the dead-time optimization, pulse width utilization, control loop response, and transient performance of the system.

UCC27614 can handle –10-V on its inputs, which improves robustness in systems with moderate ground bouncing. The inputs are independent of supply voltage and can be connected to most controller outputs for maximum control flexibility. An independent enable signal allows the power stage to be controlled independent of the main control logic. The gate driver can quickly shut off the power stage if there is a fault in the system (which requires the power train to be turned-off). The enable function also improves system robustness. Many high-frequency switching power supplies exhibit high frequency noise at the gate of the power device, which can get injected into the output pin of the gate driver and can cause the driver to malfunction. The UCC27614 performs well in such conditions due to its transient reverse current and reverse voltage capability.

The strong internal pulldown MOSFET holds the output low if the VDD voltage is below the specified UVLO threshold. This active pulldown feature further improves system robustness. The UCC27614 device’s 10-A drive current in the 2-mm × 2mm package improves system power density. This small package also enables optimum gate driver placement and improved layout.

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Technical documentation

Design & development

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Evaluation board

UCC27614EVM — UCC27614 evaluation module for single-channel 30-V, 10-A high-speed low-side gate driver

The UCC27614 evaluation module (EVM) is designed for evaluation of TI's 30-V, 10-A single-channel 2 × 2 gate driver. This EVM is targeted to evaluate the driver IC against datasheet parameters. The driver IC may evaluated against various capacitive and resistive loads. The EVM may be setup in (...)

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Simulation model

UCC27614 SIMPLIS Model

SLUM794.ZIP (74 KB) - SIMPLIS model
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Simulation model

UCC27614 Unencrypted PSpice Model

SLUM885.ZIP (18 KB) - PSpice model
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Calculation tool

SLURB20 — UCC27614 Schematic Review Template

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Reference design

PMP23126 — 3-kW phase-shifted full bridge with active clamp reference design with > 270-W/in3 power density

This reference design is a GaN-based 3-kW phase-shifted full bridge (PSFB) targeting maximum power density. The design has an active clamp to minimize voltage stress on the secondary synchronous rectifier MOSFETs enabling use of lower voltage-rating MOSFETs with better figure-of-merit (FoM). (...)

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SOIC (D) 8 Ultra Librarian
WSON (DSG) 8 Ultra Librarian

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