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UCC27200-Q1

ACTIVE

Automotive 120V 3A half-bridge gate driver with 8V UVLO and CMOS inputs

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Data sheet

UCC27200-Q1

ACTIVE
Data sheet Order now

Product details

Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 3 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.02 Rise time (ns) 8 Fall time (ns) 7 Iq (mA) 0.001 Input threshold CMOS Channel input logic CMOS Switch node voltage (V) -18 Features Integrated bootstrap diode, Negative Voltage Handling on Input TI functional safety category Functional Safety-Capable Driver configuration Noninverting
Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 3 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.02 Rise time (ns) 8 Fall time (ns) 7 Iq (mA) 0.001 Input threshold CMOS Channel input logic CMOS Switch node voltage (V) -18 Features Integrated bootstrap diode, Negative Voltage Handling on Input TI functional safety category Functional Safety-Capable Driver configuration Noninverting
HSOIC (DDA) 8 29.4 mm² (4.9 mm × 6 mm)
  • AEC-Q100 qualified for automotive applications: device temperature grade 1
  • –40°C to +150°C junction temperature range
  • Drives two N-channel MOSFETs in high-side and low-side configuration
  • Maximum boot voltage: 120V
  • Maximum VDD voltage: 20V
  • On-chip 0.65V VF, 0.65Ω RD bootstrap diode
  • 22ns propagation delay times
  • 3A sink, 3A source output currents
  • 8ns rise and 7ns fall time with 1000pF load
  • 1ns delay matching
  • AEC-Q100 qualified for automotive applications: device temperature grade 1
  • –40°C to +150°C junction temperature range
  • Drives two N-channel MOSFETs in high-side and low-side configuration
  • Maximum boot voltage: 120V
  • Maximum VDD voltage: 20V
  • On-chip 0.65V VF, 0.65Ω RD bootstrap diode
  • 22ns propagation delay times
  • 3A sink, 3A source output currents
  • 8ns rise and 7ns fall time with 1000pF load
  • 1ns delay matching

The UCC27200-Q1 high frequency N-channel MOSFET drivers includes a 120V bootstrap diode and high-side and low-side drivers with independent inputs for maximum control flexibility. This allows for N-channel MOSFET control in half-bridge, full-bridge, two-switch forward, and active-clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1ns between the turnon and turnoff of each other.

An on-chip bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers, forcing the outputs low if the drive voltage is below the specified threshold.

The UCC27200-Q1 has high-noise-immune CMOS input thresholds.

The device is offered in the 8-pin SO PowerPAD™ (DDA) package.

The UCC27200-Q1 high frequency N-channel MOSFET drivers includes a 120V bootstrap diode and high-side and low-side drivers with independent inputs for maximum control flexibility. This allows for N-channel MOSFET control in half-bridge, full-bridge, two-switch forward, and active-clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1ns between the turnon and turnoff of each other.

An on-chip bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers, forcing the outputs low if the drive voltage is below the specified threshold.

The UCC27200-Q1 has high-noise-immune CMOS input thresholds.

The device is offered in the 8-pin SO PowerPAD™ (DDA) package.
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Technical documentation

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Top documentation Type Title Format options Date
* Data sheet UCC27200-Q1 Automotive 120V, 3A/3A Half-Bridge Driver with 8V UVLO datasheet (Rev. D) PDF | HTML Jul 18, 2024
Product overview UCC272xx and UCC273xx: 120V Half-Bridge Gate Drivers for High-Powered Applications (Rev. A) PDF | HTML Mar 2, 2026
Application note Mapping Application Requirements with the 120V Halfbridge Gate Driver (Rev. A) PDF | HTML Feb 27, 2026
Functional safety information UCC27200-Q1, UCC2720xA-Q1, and UCC2721xA-Q1 Functional Safety FIT Rate, FMD and Pin FMA (Rev. C) PDF | HTML Nov 6, 2025
Application note Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML Mar 25, 2024
Application note Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML Jan 24, 2024
Application note Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML Sep 8, 2023
Application note Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML Feb 17, 2022
Application note Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) Apr 7, 2021
Application note Understanding and comparing peak current capability of gate drivers PDF | HTML Mar 30, 2021
Application note Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. May 12, 2020
Application brief External Gate Resistor Selection Guide (Rev. A) Feb 28, 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) Feb 28, 2020
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives Oct 22, 2019
Application note Maximizing DC/DC converter designs with UCC27282 Jan 18, 2019
Application note UCC27282 Improving motor drive system robustness Jan 11, 2019
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) Oct 29, 2018
Application note PFC Design Choice for On Board Charger Designs May 24, 2018
Application brief Reducing Switching Losses in On-Board Chargers for Electric Vehicles Mar 27, 2018

Design & development

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Evaluation board

UCC27288EVM — UCC27288 100-V, 3-A, 8-V UVLO half-bridge gate driver evaluation module

UCC27288EVM is designed for evaluating UCC27288D, which is a 100-V half bridge gate driver with 2.5-A peak source current and 3.5-A peak sink current capability. This EVM serves as a reference design for driving power MOSFETs with up to 20-V drive voltage.
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