SN74LVC2G132

ACTIVE

2-ch, 2-input, 1.65-V to 5.5-V NAND gates with Schmitt-Trigger inputs

SN74LVC2G132

ACTIVE

Product details

Technology family LVC Number of channels 2 Inputs per channel 2 IOL (max) (mA) 32 IOH (max) (mA) -32 Input type Schmitt-Trigger Output type Push-Pull Features Over-voltage tolerant inputs, Partial power down (Ioff), Ultra high speed (tpd <5ns) Data rate (max) (Mbps) 100 Rating Catalog Operating temperature range (°C) -40 to 125
Technology family LVC Number of channels 2 Inputs per channel 2 IOL (max) (mA) 32 IOH (max) (mA) -32 Input type Schmitt-Trigger Output type Push-Pull Features Over-voltage tolerant inputs, Partial power down (Ioff), Ultra high speed (tpd <5ns) Data rate (max) (Mbps) 100 Rating Catalog Operating temperature range (°C) -40 to 125
VSSOP (DCU) 8 6.2 mm² (2 mm × 3.1 mm) SSOP (DCT) 8 11.8 mm² (2.95 mm × 4 mm) DSBGA (YZP) 8 2.8125 mm² (— mm × — mm)
  • Available in Texas Instruments NanoFree Package
  • Supports 5-V VCC Operation
  • Inputs Accept Voltages to 5.5 V
  • Max tpd of 5.3 ns at 3.3 V
  • Low Power Consumption, 10-μA Max ICC
  • ±24-mA Output Drive at 3.3 V
  • Typical VOLP (Output Ground Bounce) <0.8 V at VCC = 3.3 V, TA = 25°C
  • Typical VOHV (Output VOH Undershoot) >2 V at VCC = 3.3 V, TA = 25°C
  • Ioff Supports Live Insertion, Partial Power Down Mode, and Back Drive Protection
  • Support Translation Down (5V to 3.3V and 3.3V to 1.8V)
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)
    • 1000-V Charged-Device Model (C101)

  • Available in Texas Instruments NanoFree Package
  • Supports 5-V VCC Operation
  • Inputs Accept Voltages to 5.5 V
  • Max tpd of 5.3 ns at 3.3 V
  • Low Power Consumption, 10-μA Max ICC
  • ±24-mA Output Drive at 3.3 V
  • Typical VOLP (Output Ground Bounce) <0.8 V at VCC = 3.3 V, TA = 25°C
  • Typical VOHV (Output VOH Undershoot) >2 V at VCC = 3.3 V, TA = 25°C
  • Ioff Supports Live Insertion, Partial Power Down Mode, and Back Drive Protection
  • Support Translation Down (5V to 3.3V and 3.3V to 1.8V)
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)
    • 1000-V Charged-Device Model (C101)

This dual 2-input NAND gate with Schmitt-trigger inputs is designed for 1.65-V to 5.5-V VCC operation.

The SN74LVC2G132 contains two inverters and performs the Boolean function Y = A ⋅ B or Y = A + B in positive logic. The device functions as two independent inverters, but because of Schmitt action, it has different input threshold levels for positive-going (VT+) and negative-going (VT-) signals.

NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the die as the package.

This device can be triggered from the slowest of input ramps and still give clean jitter-free output signals.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

This dual 2-input NAND gate with Schmitt-trigger inputs is designed for 1.65-V to 5.5-V VCC operation.

The SN74LVC2G132 contains two inverters and performs the Boolean function Y = A ⋅ B or Y = A + B in positive logic. The device functions as two independent inverters, but because of Schmitt action, it has different input threshold levels for positive-going (VT+) and negative-going (VT-) signals.

NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the die as the package.

This device can be triggered from the slowest of input ramps and still give clean jitter-free output signals.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

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* Data sheet Dual 2-Input NAND Gate With Schmitt-Trigger Inputs datasheet (Rev. D) Dec 24, 2013

Design & development

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