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SN74CBT3383C

ACTIVE

5-V, crosspoint/exchange, 10-channel FET bus switch with –2-V undershoot protection

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Data sheet

SN74CBT3383C

ACTIVE
Data sheet Order now

Product details

Protocols Analog Configuration Crosspoint/exchange Number of channels 10 Bandwidth (MHz) 200 Supply voltage (max) (V) 5.5 Ron (typ) (mΩ) 3000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 5.5 Operating temperature range (°C) -40 to 85 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 128 COFF (typ) (pF) 8 CON (typ) (pF) 18.5 OFF-state leakage current (max) (µA) 10 Ron (max) (mΩ) 12000 VIH (min) (V) 2 VIL (max) (V) 0.8 Rating Catalog
Protocols Analog Configuration Crosspoint/exchange Number of channels 10 Bandwidth (MHz) 200 Supply voltage (max) (V) 5.5 Ron (typ) (mΩ) 3000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 5.5 Operating temperature range (°C) -40 to 85 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 128 COFF (typ) (pF) 8 CON (typ) (pF) 18.5 OFF-state leakage current (max) (µA) 10 Ron (max) (mΩ) 12000 VIH (min) (V) 2 VIL (max) (V) 0.8 Rating Catalog
SOIC (DW) 24 159.65 mm² 15.5 x 10.3 SSOP (DBQ) 24 51.9 mm² 8.65 x 6 TSSOP (PW) 24 49.92 mm² 7.8 x 6.4
  • Undershoot protection for off-isolation on A and B ports up to −2 V
  • Bidirectional data flow, with near-zero propagation delay
  • Low on-state resistance (ron) characteristics (ron = 3 Ω typical)
  • Low input output capacitance minimizes loading and signal distortion (Cio (OFF) = 8 pF typical)
  • Data and control inputs provide undershoot clamp diodes
  • Low power consumption (ICC = 3 µA maximum)
  • VCC operating range from 4 V to 5.5 V data I/Os support 0 to 5-V signaling levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V)
  • Control inputs can be driven by TTL or 5-V/3.3-V CMOS outputs
  • Ioff supports partial-power-down mode operation
  • Latch-up performance exceeds 100 mA per JESD 78, Class II
  • ESD performance tested per JESD 22− 2000-V Human-Body Model (A114-B, Class II)− 1000-V Charged-Device Model (C101)
  • Supports both digital and analog applications: PCI interface, memory interleaving, bus isolation, low-distortion signal gating
  • Undershoot protection for off-isolation on A and B ports up to −2 V
  • Bidirectional data flow, with near-zero propagation delay
  • Low on-state resistance (ron) characteristics (ron = 3 Ω typical)
  • Low input output capacitance minimizes loading and signal distortion (Cio (OFF) = 8 pF typical)
  • Data and control inputs provide undershoot clamp diodes
  • Low power consumption (ICC = 3 µA maximum)
  • VCC operating range from 4 V to 5.5 V data I/Os support 0 to 5-V signaling levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V)
  • Control inputs can be driven by TTL or 5-V/3.3-V CMOS outputs
  • Ioff supports partial-power-down mode operation
  • Latch-up performance exceeds 100 mA per JESD 78, Class II
  • ESD performance tested per JESD 22− 2000-V Human-Body Model (A114-B, Class II)− 1000-V Charged-Device Model (C101)
  • Supports both digital and analog applications: PCI interface, memory interleaving, bus isolation, low-distortion signal gating

The SN74CBT3383C is a high-speed TTL-compatible FET bus-exchange switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3383C provides protection for undershoot up to −2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBT3383C is organized as a 10-bit bus switch, or as a 5-bit bus-exchange switch with a single output-enable (BE) input that provides data exchanging between four signal ports. The select (BX) input controls the data path of the bus-exchange switch. When BE is low, the A port is connected to the B port, allowing bidirectional data flow between ports. When BE is high, a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, BE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CBT3383C is a high-speed TTL-compatible FET bus-exchange switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3383C provides protection for undershoot up to −2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBT3383C is organized as a 10-bit bus switch, or as a 5-bit bus-exchange switch with a single output-enable (BE) input that provides data exchanging between four signal ports. The select (BX) input controls the data path of the bus-exchange switch. When BE is low, the A port is connected to the B port, allowing bidirectional data flow between ports. When BE is high, a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, BE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
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Technical documentation

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Top documentation Type Title Format options Date
* Data sheet SN74CBT3383C 10-Bit FET Bus-Exchange Switch 5-V Bus SwitchWith −2-V Undershoot Protection datasheet (Rev. A) PDF | HTML 02 Dec 2022
Selection guide Logic Guide (Rev. AC) PDF | HTML 13 Nov 2025
Application note Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 02 Jun 2022
Application note Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 01 Dec 2021
Application note CBT-C, CB3T, and CB3Q Signal-Switch Families (Rev. C) PDF | HTML 19 Nov 2021
Application brief Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) PDF | HTML 06 Jan 2021
Selection guide Little Logic Guide 2018 (Rev. G) 06 Jul 2018
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 02 Dec 2015
User guide LOGIC Pocket Data Book (Rev. B) 16 Jan 2007
More literature Digital Bus Switch Selection Guide (Rev. A) 10 Nov 2004
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 Jul 2004
User guide Signal Switch Data Book (Rev. A) 14 Nov 2003
Application note Bus FET Switch Solutions for Live Insertion Applications 07 Feb 2003

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