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CSD17318Q2

ACTIVE

30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 16.9 mOhm

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Data sheet

CSD17318Q2

ACTIVE
Data sheet Order now

Product details

VDS (V) 30 VGS (V) 10 Type N-channel Configuration Single Rds(on) at VGS=4.5 V (max) (mΩ) 16.9 Rds(on) at VGS=2.5 V (max) (mΩ) 30 VGSTH typ (typ) (V) 0.9 QG (typ) (nC) 6 QGD (typ) (nC) 1.3 QGS (typ) (nC) 1.5 ID - silicon limited at TC=25°C (A) 25 ID - package limited (A) 22 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
VDS (V) 30 VGS (V) 10 Type N-channel Configuration Single Rds(on) at VGS=4.5 V (max) (mΩ) 16.9 Rds(on) at VGS=2.5 V (max) (mΩ) 30 VGSTH typ (typ) (V) 0.9 QG (typ) (nC) 6 QGD (typ) (nC) 1.3 QGS (typ) (nC) 1.5 ID - silicon limited at TC=25°C (A) 25 ID - package limited (A) 22 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
WSON (DQK) 6 4 mm² (2 mm × 2 mm)
  • Optimized for 5V gate drive
  • Low capacitance and charge
  • Low RDS(ON)
  • Low-thermal resistance
  • Lead free
  • RoHS compliant
  • Halogen free
  • SON 2mm × 2mm plastic package
  • Optimized for 5V gate drive
  • Low capacitance and charge
  • Low RDS(ON)
  • Low-thermal resistance
  • Lead free
  • RoHS compliant
  • Halogen free
  • SON 2mm × 2mm plastic package

This 30V, 12.6mΩ, 2mm × 2mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The 2mm × 2mm SON offers excellent thermal performance for the size of the package.

This 30V, 12.6mΩ, 2mm × 2mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The 2mm × 2mm SON offers excellent thermal performance for the size of the package.
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Technical documentation

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Top documentation Type Title Format options Date
* Data sheet CSD17318Q2 30V N-Channel NexFET™ Power MOSFET datasheet (Rev. B) PDF | HTML Jun 6, 2024
Application brief Estimating Leakage Currents of Power MOSFETs PDF | HTML Oct 31, 2025
Application note MOSFET Support and Training Tools (Rev. G) PDF | HTML Oct 27, 2025
Application note Semiconductor and IC Package Thermal Metrics (Rev. D) PDF | HTML Mar 25, 2024
Application note Using MOSFET Transient Thermal Impedance Curves In Your Design PDF | HTML Dec 18, 2023
Application note QFN and SON PCB Attachment (Rev. C) PDF | HTML Dec 6, 2023
Application note Using MOSFET Safe Operating Area Curves in Your Design PDF | HTML Mar 13, 2023
Application brief Tips for Successfully Paralleling Power MOSFETs PDF | HTML May 31, 2022
Application note Ringing Reduction Techniques for NexFET High Performance MOSFETs Nov 16, 2011

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

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Reference design

TIDA-01606 — 11-kW, bidirectional three-phase three-level (T-type) inverter and PFC reference design

This reference design provides an overview on how to implement a bidirectional three-level, three-phase, SiC-based active front end (AFE) inverter and power factor correction (PFC) stage. The design uses switching frequency up to 90kHz and an LCL output filter to reduce the size of the magnetics. (...)
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