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TPS7H6013-SP

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Radiation-hardened, QML-V, 60V half-bridge GaN gate driver

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Data sheet

TPS7H6013-SP

ACTIVE
Data sheet Order now

Product details

Bootstrap supply voltage (max) (V) 60 Power switch GaNFET Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 16 Peak output current (A) 1.3 Operating temperature range (°C) -55 to 125 Undervoltage lockout (typ) (V) 8 Rating Space Propagation delay time (µs) 0.035 Rise time (ns) 0.4 Fall time (ns) 4 Iq (mA) 0.5 Input threshold TTL Channel input logic TTL/PWM Features Dead time control, Interlock, Internal LDO Driver configuration Half bridge
Bootstrap supply voltage (max) (V) 60 Power switch GaNFET Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 16 Peak output current (A) 1.3 Operating temperature range (°C) -55 to 125 Undervoltage lockout (typ) (V) 8 Rating Space Propagation delay time (µs) 0.035 Rise time (ns) 0.4 Fall time (ns) 4 Iq (mA) 0.5 Input threshold TTL Channel input logic TTL/PWM Features Dead time control, Interlock, Internal LDO Driver configuration Half bridge
CFP (HBX) 48 468.72 mm² (16.74 mm × 28 mm)
  • Radiation Performance:
    • Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 1.3A peak source, 2.5A peak sink current
  • Two operational modes:
    • Single PWM input with adjustable dead time
    • Two independent inputs
  • Selectable input interlock protection in independent input mode
  • Split outputs for adjustable turn-on and turn-off times
  • 30ns typical propagation delay in independent input mode
  • 5.5ns typical delay matching
  • Radiation Performance:
    • Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 1.3A peak source, 2.5A peak sink current
  • Two operational modes:
    • Single PWM input with adjustable dead time
    • Two independent inputs
  • Selectable input interlock protection in independent input mode
  • Split outputs for adjustable turn-on and turn-off times
  • 30ns typical propagation delay in independent input mode
  • 5.5ns typical delay matching

The TPS7H60x3-SP series of radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET) gate drivers is designed for high frequency, high efficiency applications. The series consists of the TPS7H6003-SP (200V rating), TPS7H6013-SP (60V rating), and the TPS7H6023-SP (22V rating). The drivers feature adjustable dead time capability, small 30ns propagation delay, and 5.5ns high-side and low-side matching. These parts also include internal high-side and low-side LDOs which ensure a drive voltage of 5V regardless of supply voltage. The TPS7H60x3-SP drivers all have split-gate outputs, providing flexibility to adjust the turn-on and turn-off strength of the outputs independently.

The TPS7H60x3-SP drivers feature two control input modes: independent input mode (IIM) and PWM mode. In IIM each of the outputs is controlled by a dedicated input. In PWM mode, two complementary outputs signals are generated from a single input and the user can adjust the dead time for each edge.

The gate drivers also offer user configurable input interlock in independent input mode as anti-shoot through protection. Input interlock disallows turn-on of both outputs when both inputs are on simultaneously. The user has the option to enable or disable this protection in independent input mode, which allows the driver to be used in a number of different converter configurations. The drivers can also be utilized for both half-bridge and dual-low side converter applications.

The TPS7H60x3-SP series of radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET) gate drivers is designed for high frequency, high efficiency applications. The series consists of the TPS7H6003-SP (200V rating), TPS7H6013-SP (60V rating), and the TPS7H6023-SP (22V rating). The drivers feature adjustable dead time capability, small 30ns propagation delay, and 5.5ns high-side and low-side matching. These parts also include internal high-side and low-side LDOs which ensure a drive voltage of 5V regardless of supply voltage. The TPS7H60x3-SP drivers all have split-gate outputs, providing flexibility to adjust the turn-on and turn-off strength of the outputs independently.

The TPS7H60x3-SP drivers feature two control input modes: independent input mode (IIM) and PWM mode. In IIM each of the outputs is controlled by a dedicated input. In PWM mode, two complementary outputs signals are generated from a single input and the user can adjust the dead time for each edge.

The gate drivers also offer user configurable input interlock in independent input mode as anti-shoot through protection. Input interlock disallows turn-on of both outputs when both inputs are on simultaneously. The user has the option to enable or disable this protection in independent input mode, which allows the driver to be used in a number of different converter configurations. The drivers can also be utilized for both half-bridge and dual-low side converter applications.
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* Data sheet TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers datasheet (Rev. C) PDF | HTML Apr 17, 2024
* Radiation & reliability report TPS7H60X3-SP Neutron Displacement Damage (NDD) Characterization Report (Rev. A) PDF | HTML Aug 13, 2024
* Radiation & reliability report TPS7H60X3-SP Single-Event Effects (SEE) Report (Rev. A) PDF | HTML Jun 17, 2024
* Radiation & reliability report TPS7H6013-SP Total Ionizing Dose (TID) Radiation Report PDF | HTML Apr 11, 2024
* SMD TPS7H6013-SP SMD 5962-22201 Apr 30, 2024
Selection guide TI Space Products (Rev. L) Mar 27, 2026
Application note Hermetic Package Reflow Profiles, Termination Finishes, and Lead Trim and Form (Rev. A) PDF | HTML Nov 5, 2025
Application brief DLA Approved Optimizations for QML Products (Rev. C) PDF | HTML Jun 17, 2025
Application note Heavy Ion Orbital Environment Single-Event Effects Estimations (Rev. B) PDF | HTML Jun 10, 2025
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Application note QML flow, its importance, and obtaining lot information (Rev. C) Aug 30, 2023
Application note Single-Event Effects Confidence Interval Calculations (Rev. A) PDF | HTML Oct 19, 2022
Application note DLA Standard Microcircuit Drawings (SMD) and JAN Part Numbers Primer Aug 21, 2020
E-book Radiation Handbook for Electronics (Rev. A) May 21, 2019

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

TPS7H6013EVM-CVAL — TPS7H6013-SP evaluation module

The TPS7H6013EVM-CVAL helps users evaluate the TPS7H6013-SP device. The board accepts up to a 45V input and allows users to test the reliability of the TPS7H6013-SP by driving a GaN FET. By default, the evaluation module is set up to run with the PWM mode of TPS7H6013-SP, which accepts an input of (...)
User guide: PDF | HTML
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Simulation model

TPS7H60x3-SP PSpice Transient Model

SNOM790.ZIP (46 KB) - PSpice model
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Simulation model

TPS7H60x3/TPS7H60x5 SIMPLIS Model

SNOM811.ZIP (22 KB) - SIMPLIS model
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Reference design

PMP23391 — 300W, 12V output ZVS full-bridge converter reference design for 100kRad applications

This reference design is a full-bridge topology that is comprised of a TPS7H5005-SEP referenced on secondary ground that controls three TPS7H6005-SEP half-bridge gate drivers. The two drivers referenced to the primary side operate in pulse width modulation (PWM) mode which allows for the design to (...)
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CFP (HBX) 48 Ultra Librarian
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