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TLV2316-Q1

ACTIVE

Automotive-grade, dual, 5.5-V, 10-MHz, RRIO operational amplifier

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Data sheet

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TLV9062-Q1 ACTIVE Automotive, dual 5.5-V 10-MHz operational amplifier Faster slew rate (6.5 V/us), lower offset voltage (1.6 mV)

TLV2316-Q1

ACTIVE
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Product details

Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 1.8 Rail-to-rail In, Out GBW (typ) (MHz) 10 Slew rate (typ) (V/µs) 6 Vos (offset voltage at 25°C) (max) (mV) 3 Iq per channel (typ) (mA) 0.4 Vn at 1 kHz (typ) (nV√Hz) 12 Rating Automotive Operating temperature range (°C) -40 to 125 Offset drift (typ) (µV/°C) 2 Features Cost Optimized, EMI Hardened CMRR (typ) (dB) 90 Iout (typ) (A) 0.05 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.2 Input common mode headroom (to positive supply) (typ) (V) 0.2 Output swing headroom (to negative supply) (typ) (V) 0.005 Output swing headroom (to positive supply) (typ) (V) -0.005
Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 1.8 Rail-to-rail In, Out GBW (typ) (MHz) 10 Slew rate (typ) (V/µs) 6 Vos (offset voltage at 25°C) (max) (mV) 3 Iq per channel (typ) (mA) 0.4 Vn at 1 kHz (typ) (nV√Hz) 12 Rating Automotive Operating temperature range (°C) -40 to 125 Offset drift (typ) (µV/°C) 2 Features Cost Optimized, EMI Hardened CMRR (typ) (dB) 90 Iout (typ) (A) 0.05 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.2 Input common mode headroom (to positive supply) (typ) (V) 0.2 Output swing headroom (to negative supply) (typ) (V) 0.005 Output swing headroom (to positive supply) (typ) (V) -0.005
VSSOP (DGK) 8 14.7 mm² (3 mm × 4.9 mm)
  • Qualified for Automotive Applications
  • AEC-Q100 With the Following Results:
    • Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 3A
    • Device CDM ESD Classification Level C5
  • Unity-Gain Bandwidth: 10 MHz
  • Low IQ: 400 µA/ch
    • Excellent Power-to-Bandwidth Ratio
    • Stable IQ Over Temperature and Supply Range
  • Wide Supply Range: 1.8 V to 5.5 V
  • Low Noise: 12 nV/√Hz at 1 kHz
  • Low Input Bias Current: ±10 pA
  • Offset Voltage: ±0.75 mV
  • Unity-Gain Stable
  • Internal RFI and EMI Filter
  • Number of Channels:
    • TLV316-Q1: 1
    • TLV2316-Q1: 2
    • TLV4316-Q1: 4
  • Extended Temperature Range: –40°C to +125°C
  • Qualified for Automotive Applications
  • AEC-Q100 With the Following Results:
    • Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 3A
    • Device CDM ESD Classification Level C5
  • Unity-Gain Bandwidth: 10 MHz
  • Low IQ: 400 µA/ch
    • Excellent Power-to-Bandwidth Ratio
    • Stable IQ Over Temperature and Supply Range
  • Wide Supply Range: 1.8 V to 5.5 V
  • Low Noise: 12 nV/√Hz at 1 kHz
  • Low Input Bias Current: ±10 pA
  • Offset Voltage: ±0.75 mV
  • Unity-Gain Stable
  • Internal RFI and EMI Filter
  • Number of Channels:
    • TLV316-Q1: 1
    • TLV2316-Q1: 2
    • TLV4316-Q1: 4
  • Extended Temperature Range: –40°C to +125°C

The TLV316-Q1 (single), TLV2316-Q1 (dual), and TLV4316-Q1 (quad) devices comprise a family of general-purpose, low-power operational amplifiers. Features such as rail-to-rail input and output swings, low quiescent current (400 µA/ch typical) combined with a wide bandwidth of 10 MHz, and very-low noise (12 nV/√Hz at 1 kHz) make this family suitable for a circuits requiring a good speed and power ratio. The low input bias current supports operational amplifiers that are used in applications with megaohm source impedances. The low-input bias current of the TLVx316-Q1 yields a very-low current noise to make the family attractive for high impedance sensor interfaces.

The robust design of the TLVx316-Q1 provides ease-of-use to the circuit designer: a unity-gain stable, integrated RFI and EMI rejection filter, no phase reversal in overdrive condition, and high electrostatic discharge (ESD) protection (4-kV HBM).

These devices are optimized for low-voltage operation as low as 1.8 V (±0.9 V) and up to 5.5 V (±2.75 V). This latest addition of low-voltage CMOS operational amplifiers to the portfolio, in conjunction with the TLVx313-Q1 and TLVx314-Q1 series, offer a family of bandwidth, noise, and power options to meet the needs of a wide variety of applications.

The TLV316-Q1 (single), TLV2316-Q1 (dual), and TLV4316-Q1 (quad) devices comprise a family of general-purpose, low-power operational amplifiers. Features such as rail-to-rail input and output swings, low quiescent current (400 µA/ch typical) combined with a wide bandwidth of 10 MHz, and very-low noise (12 nV/√Hz at 1 kHz) make this family suitable for a circuits requiring a good speed and power ratio. The low input bias current supports operational amplifiers that are used in applications with megaohm source impedances. The low-input bias current of the TLVx316-Q1 yields a very-low current noise to make the family attractive for high impedance sensor interfaces.

The robust design of the TLVx316-Q1 provides ease-of-use to the circuit designer: a unity-gain stable, integrated RFI and EMI rejection filter, no phase reversal in overdrive condition, and high electrostatic discharge (ESD) protection (4-kV HBM).

These devices are optimized for low-voltage operation as low as 1.8 V (±0.9 V) and up to 5.5 V (±2.75 V). This latest addition of low-voltage CMOS operational amplifiers to the portfolio, in conjunction with the TLVx313-Q1 and TLVx314-Q1 series, offer a family of bandwidth, noise, and power options to meet the needs of a wide variety of applications.
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* Data sheet TLVx316-Q1 10-MHz, Rail-to-Rail Input/Output, Low-Voltage, 1.8-V CMOS Operational Amplifiers datasheet (Rev. B) PDF | HTML Aug 29, 2017
E-book The Signal e-book: A compendium of blog posts on op amp design topics PDF | HTML Mar 28, 2017

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VSSOP (DGK) 8 Ultra Librarian
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