The TLC27L2x and TLC27L7 dual op amps combine a wide range of input offset-voltage grades with low offset-voltage drift, high input impedance, extremely low power, and high gain. These devices use the Texas Instruments silicon-gate LinCMOS™ technology, providing offset-voltage stability far exceeding the stability with conventional metal-gate processes.
Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC27L2 (10mV) to the high-precision TLC27L7 (1000µV). The extremely high input impedance and low bias currents, along with good common-mode rejection and supply-voltage rejection, and low power consumption, make these devices a good choice for new state-of-the-art designs and upgrading existing designs.
In general, many features associated with bipolar technology are available in LinCMOS operational amplifiers, without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are all easily designed with the TLC27Lx. The devices also exhibit low-voltage and single-supply operation, making them an excellent choice for remote and inaccessible battery-powered applications. The common-mode input-voltage range includes the negative rail.
The TLC27Lx incorporate internal ESD-protection circuits that prevent functional failures at voltages up to 2000V as tested under MIL-STD-883C, Method 3015.2. Exercise care when handling these devices because exposure to ESD potentially degrades device parametric performance.
C-suffix devices are characterized for operation from 0°C to 70°C, I-suffix devices from −40°C to +85°C, and M-suffix devices over the full military temperature range of −55°C to +125°C.
The TLC27L2x and TLC27L7 dual op amps combine a wide range of input offset-voltage grades with low offset-voltage drift, high input impedance, extremely low power, and high gain. These devices use the Texas Instruments silicon-gate LinCMOS™ technology, providing offset-voltage stability far exceeding the stability with conventional metal-gate processes.
Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC27L2 (10mV) to the high-precision TLC27L7 (1000µV). The extremely high input impedance and low bias currents, along with good common-mode rejection and supply-voltage rejection, and low power consumption, make these devices a good choice for new state-of-the-art designs and upgrading existing designs.
In general, many features associated with bipolar technology are available in LinCMOS operational amplifiers, without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are all easily designed with the TLC27Lx. The devices also exhibit low-voltage and single-supply operation, making them an excellent choice for remote and inaccessible battery-powered applications. The common-mode input-voltage range includes the negative rail.
The TLC27Lx incorporate internal ESD-protection circuits that prevent functional failures at voltages up to 2000V as tested under MIL-STD-883C, Method 3015.2. Exercise care when handling these devices because exposure to ESD potentially degrades device parametric performance.
C-suffix devices are characterized for operation from 0°C to 70°C, I-suffix devices from −40°C to +85°C, and M-suffix devices over the full military temperature range of −55°C to +125°C.