Product details

Number of channels 1 Vs (max) (V) 36 Vs (min) (V) 8 Input offset (±) (max) (µV) 35 Voltage gain (min) (V/V) 1 Voltage gain (max) (V/V) 10000 Noise at 1 kHz (typ) (nV√Hz) 1 Features Current Feedback, High speed, Super-beta, Ultra-low noise CMRR (min) (dB) 120 Input offset drift (±) (max) (µV/°C) 0.4 Input bias current (±) (max) (nA) 20 Iq (typ) (mA) 6.2 Bandwidth at min gain (typ) (MHz) 28 Gain error (±) (max) (%) 0.1 Operating temperature range (°C) -40 to 125 Rating Catalog Type Resistor Gain nonlinearity (±) (max) (%) 0.001 Output swing headroom (to negative supply) (typ) (V) 0.15 Output swing headroom (to positive supply) (typ) (V) -0.15 Input common mode headroom (to negative supply) (typ) (V) 2.5 Input common mode headroom (to positive supply) (typ) (V) -2.5 Noise at 0.1 Hz to 10 Hz (typ) (µVPP) 0.06
Number of channels 1 Vs (max) (V) 36 Vs (min) (V) 8 Input offset (±) (max) (µV) 35 Voltage gain (min) (V/V) 1 Voltage gain (max) (V/V) 10000 Noise at 1 kHz (typ) (nV√Hz) 1 Features Current Feedback, High speed, Super-beta, Ultra-low noise CMRR (min) (dB) 120 Input offset drift (±) (max) (µV/°C) 0.4 Input bias current (±) (max) (nA) 20 Iq (typ) (mA) 6.2 Bandwidth at min gain (typ) (MHz) 28 Gain error (±) (max) (%) 0.1 Operating temperature range (°C) -40 to 125 Rating Catalog Type Resistor Gain nonlinearity (±) (max) (%) 0.001 Output swing headroom (to negative supply) (typ) (V) 0.15 Output swing headroom (to positive supply) (typ) (V) -0.15 Input common mode headroom (to negative supply) (typ) (V) 2.5 Input common mode headroom (to positive supply) (typ) (V) -2.5 Noise at 0.1 Hz to 10 Hz (typ) (µVPP) 0.06
VSSOP (DGK) 8 14.7 mm² (3 mm × 4.9 mm) SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm)
  • Ultra-low noise: 1-nV/√Hz input voltage noise (typical)
  • Precision super-beta input performance:
    • Low offset voltage: 35 µV (maximum)
    • Low offset voltage drift: 0.4 µV/°C (maximum)
    • Low input bias current: 20 nA (maximum)
    • Low gain drift: 5 ppm/°C for G = 1 (maximum)
  • Bandwidth: 28 MHz (G = 1), 8 MHz (G = 100)
  • Slew rate: 35 V/µs
  • Common-mode rejection: 120 dB (minimum) for maximum gain
  • Supply range:
    • Single supply: 8 V to 36 V
    • Dual supply: ±4 V to ±18 V
  • Specified temperature range: –40°C to +125°C
  • Packages: 8-pin SOIC and VSSOP
  • Ultra-low noise: 1-nV/√Hz input voltage noise (typical)
  • Precision super-beta input performance:
    • Low offset voltage: 35 µV (maximum)
    • Low offset voltage drift: 0.4 µV/°C (maximum)
    • Low input bias current: 20 nA (maximum)
    • Low gain drift: 5 ppm/°C for G = 1 (maximum)
  • Bandwidth: 28 MHz (G = 1), 8 MHz (G = 100)
  • Slew rate: 35 V/µs
  • Common-mode rejection: 120 dB (minimum) for maximum gain
  • Supply range:
    • Single supply: 8 V to 36 V
    • Dual supply: ±4 V to ±18 V
  • Specified temperature range: –40°C to +125°C
  • Packages: 8-pin SOIC and VSSOP

The INA849 is an ultra-low noise instrumentation amplifier optimized for maximum accuracy in high-resolution systems and operation over a wide single-supply or dual-supply range. The device offers significantly lower input bias current than competitors as a result of super-beta input transistors. A state-of-the-art manufacturing process provides exceptionally low voltage noise, input offset voltage, and offset voltage drift.

Precisely matched integrated resistors provide a high, 92-dB (G = 1) common-mode rejection across the full input common-mode range. A single external resistor sets any gain from 1 to 10,000. The current-feedback topology of the INA849 provides wide bandwidth at higher gains for very-small, fast-moving signals. For example, the device provides 8 MHz of bandwidth at G = 100, and 28 MHz at a G = 1, with a fast 0.4-µs settling time (0.01%) for directly driving high-resolution, analog-to-digital converters (ADCs).

The INA849 is an ultra-low noise instrumentation amplifier optimized for maximum accuracy in high-resolution systems and operation over a wide single-supply or dual-supply range. The device offers significantly lower input bias current than competitors as a result of super-beta input transistors. A state-of-the-art manufacturing process provides exceptionally low voltage noise, input offset voltage, and offset voltage drift.

Precisely matched integrated resistors provide a high, 92-dB (G = 1) common-mode rejection across the full input common-mode range. A single external resistor sets any gain from 1 to 10,000. The current-feedback topology of the INA849 provides wide bandwidth at higher gains for very-small, fast-moving signals. For example, the device provides 8 MHz of bandwidth at G = 100, and 28 MHz at a G = 1, with a fast 0.4-µs settling time (0.01%) for directly driving high-resolution, analog-to-digital converters (ADCs).

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* Data sheet INA849 Ultra-Low-Noise (1 nV/√Hz), High-Bandwidth, Instrumentation Amplifier datasheet (Rev. B) PDF | HTML Apr 23, 2021
Application brief Ultra-Low-Noise JFET Preamplifier Design for High Impedance Sensors PDF | HTML May 16, 2024
Application note Amplifier Input Common-Mode and Output-Swing Limitations PDF | HTML Jan 14, 2022
Application note Importance of Input Bias Current Return Paths in Instrumentation Amplifier Apps PDF | HTML Jul 27, 2021
Application brief How to Select Precision Amplifiers for Semiconductor Testers (Rev. A) PDF | HTML Dec 3, 2020
Technical article What is an instrumentation amplifier? PDF | HTML Aug 9, 2019

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