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LM74910H-Q1

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具有断路器、200kHz ACS、欠压和过压保护功能以及睡眠模式的汽车级理想二极管

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LM74910H-Q1

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产品详情

Vin (min) (V) 3 Vin (max) (V) 65 Number of channels 1 Features Adjustable current limit, Analog current monitor, Overvoltage protection, Reverse current blocking, Reverse polarity protection, Short circuit protection Iq (typ) (mA) 0.63 TI functional safety category Functional Safety-Capable FET External back-to-back FET IGate source (typ) (µA) 18500 IGate sink (typ) (mA) 2670 Operating temperature range (°C) -40 to 125 Rating Automotive Shutdown current (ISD) (mA) (A) 0.00287 Device type Ideal diode controller Product type Ideal diode controller
Vin (min) (V) 3 Vin (max) (V) 65 Number of channels 1 Features Adjustable current limit, Analog current monitor, Overvoltage protection, Reverse current blocking, Reverse polarity protection, Short circuit protection Iq (typ) (mA) 0.63 TI functional safety category Functional Safety-Capable FET External back-to-back FET IGate source (typ) (µA) 18500 IGate sink (typ) (mA) 2670 Operating temperature range (°C) -40 to 125 Rating Automotive Shutdown current (ISD) (mA) (A) 0.00287 Device type Ideal diode controller Product type Ideal diode controller
VQFN (RGE) 24 16 mm² 4 x 4
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
  • Functional Safety-Capable
  • 3V to 65V input range
  • 74V Absolute Maximum Rating for LM74910H-Q1
  • Reverse input protection down to –65V
  • Drives external back-to-back N-Channel MOSFETs in common drain configuration
  • Ideal diode operation with 10.5mV A to C forward voltage drop regulation
  • Low reverse detection threshold (–10.5mV) with fast turn off response (0.5µs)
  • 20mA peak gate (DGATE) turn on current
  • 2.6A peak DGATE turnoff current
  • Adjustable overcurrent and short circuit protection
  • Analog current monitor output with 2% accuracy for LM74910H-Q1
  • Adjustable overvoltage and undervoltage protection
  • SLEEP mode OCP Retry in LM74910H-Q1
  • Low 2.5µA shutdown current (EN=Low)
  • SLEEP mode with 6µA current (EN=High, SLEEP=Low)
  • Meets automotive ISO7637 transient requirements with a suitable TVS diode
  • Available in space saving 24-pin VQFN package
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
  • Functional Safety-Capable
  • 3V to 65V input range
  • 74V Absolute Maximum Rating for LM74910H-Q1
  • Reverse input protection down to –65V
  • Drives external back-to-back N-Channel MOSFETs in common drain configuration
  • Ideal diode operation with 10.5mV A to C forward voltage drop regulation
  • Low reverse detection threshold (–10.5mV) with fast turn off response (0.5µs)
  • 20mA peak gate (DGATE) turn on current
  • 2.6A peak DGATE turnoff current
  • Adjustable overcurrent and short circuit protection
  • Analog current monitor output with 2% accuracy for LM74910H-Q1
  • Adjustable overvoltage and undervoltage protection
  • SLEEP mode OCP Retry in LM74910H-Q1
  • Low 2.5µA shutdown current (EN=Low)
  • SLEEP mode with 6µA current (EN=High, SLEEP=Low)
  • Meets automotive ISO7637 transient requirements with a suitable TVS diode
  • Available in space saving 24-pin VQFN package

The LM749x0-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control with overcurrent and overvoltage protection. The wide input supply of 3V to 65V allows protection and control of 12V and 24V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) in case of overcurrent and overvoltage events using HGATE control. The device has integrated current sense amplifier which provides accurate current monitoring with adjustable overcurrent and short circuit thresholds. The device features an adjustable overvoltage cut-off protection feature. The device features a SLEEP mode which enables ultra-low quiescent current consumption (6µA) and at the same time providing refresh current to the always ON loads when vehicle is in the parking state. The LM749x0-Q1 has a maximum voltage rating of 65V.

The LM749x0-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control with overcurrent and overvoltage protection. The wide input supply of 3V to 65V allows protection and control of 12V and 24V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) in case of overcurrent and overvoltage events using HGATE control. The device has integrated current sense amplifier which provides accurate current monitoring with adjustable overcurrent and short circuit thresholds. The device features an adjustable overvoltage cut-off protection feature. The device features a SLEEP mode which enables ultra-low quiescent current consumption (6µA) and at the same time providing refresh current to the always ON loads when vehicle is in the parking state. The LM749x0-Q1 has a maximum voltage rating of 65V.
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* 数据表 LM749x0-Q1 Automotive Ideal Diode With Circuit Breaker, Undervoltage, and Overvoltage Protection With Fault Output 数据表 (Rev. C) PDF | HTML 2025年 8月 12日

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LM74900Q1EVM — LM74900-Q1 理想二极管控制器评估模块

LM74900-Q1 评估模块可评估 LM74900-Q1 理想二极管控制器在反向电池保护应用中的运行情况和性能。此评估模块演示了 LM74900-Q1 如何控制两个背对背 N 沟道功率 MOSFET，以仿真具有电源路径开/关控制功能以及过流和过压保护功能的理想二极管整流器。

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