TLV2772A-EP

ACTIVE

Enhanced product, dual, 5.5-V, 5.1-MHz, 1.6-mV offset, high slew rate (10.5-V/μs) op amp

A newer version of this product is available

open-in-new Compare alternates
Drop-in replacement with upgraded functionality to the compared device
OPA4991-EP ACTIVE Enhanced-product, quad, 40-V 4.5-MHz rail-to-rail input and output operational amplifier Rail-to-rail I/O, wider supply range (2.7 V to 40 V), higher gain bandwidth (4.5 MHz), faster slew rate (21 V/µs), lower offset voltage (0.895 mV), lower power (0.56 mA), higher output current (75 mA)
Pin-for-pin with same functionality to the compared device
TLV2252A-EP ACTIVE Enhanced Product Advanced Lincmos(Tm) Rail-To-Rail Very Low-Power Operational Amplifiers Wider supply range (2.7 V to 16 V), lower offset voltage (0.85 mV), lower power (0.035 mA), wider temp range (-40 to 125)

Product details

Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 2.5 Rail-to-rail In to V-, Out GBW (typ) (MHz) 5.1 Slew rate (typ) (V/µs) 10.5 Vos (offset voltage at 25°C) (max) (mV) 1.6 Iq per channel (typ) (mA) 1 Vn at 1 kHz (typ) (nV√Hz) 17 Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125 Offset drift (typ) (µV/°C) 2 Input bias current (max) (pA) 60 CMRR (typ) (dB) 96 Iout (typ) (A) 0.04 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -1.3 Output swing headroom (to negative supply) (typ) (V) 0.1 Output swing headroom (to positive supply) (typ) (V) -0.1
Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 2.5 Rail-to-rail In to V-, Out GBW (typ) (MHz) 5.1 Slew rate (typ) (V/µs) 10.5 Vos (offset voltage at 25°C) (max) (mV) 1.6 Iq per channel (typ) (mA) 1 Vn at 1 kHz (typ) (nV√Hz) 17 Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125 Offset drift (typ) (µV/°C) 2 Input bias current (max) (pA) 60 CMRR (typ) (dB) 96 Iout (typ) (A) 0.04 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -1.3 Output swing headroom (to negative supply) (typ) (V) 0.1 Output swing headroom (to positive supply) (typ) (V) -0.1
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of -55°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree(1)
  • ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
  • High Slew Rate . . . 10.5 V/µs Typ
  • High-Gain Bandwidth . . . 5.1 MHz Typ
  • Supply Voltage Range 2.5 V to 5.5 V
  • Rail-to-Rail Output
  • 360 µV Input Offset Voltage
  • Low Distortion Driving 600- 0.005% THD+N
  • 1 mA Supply Current (Per Channel)
  • 17 nV/Hz Input Noise Voltage
  • 2 pA Input Bias Current
  • Characterized From TA = -55°C to 125°C
  • Micropower Shutdown Mode . . . IDD < 1 µA

(1) Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of -55°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree(1)
  • ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
  • High Slew Rate . . . 10.5 V/µs Typ
  • High-Gain Bandwidth . . . 5.1 MHz Typ
  • Supply Voltage Range 2.5 V to 5.5 V
  • Rail-to-Rail Output
  • 360 µV Input Offset Voltage
  • Low Distortion Driving 600- 0.005% THD+N
  • 1 mA Supply Current (Per Channel)
  • 17 nV/Hz Input Noise Voltage
  • 2 pA Input Bias Current
  • Characterized From TA = -55°C to 125°C
  • Micropower Shutdown Mode . . . IDD < 1 µA

(1) Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

The TLV277x CMOS operational amplifier family combines high slew rate and bandwidth, rail-to-rail output swing, high output drive, and excellent dc precision. The device provides 10.5 V/µs of slew rate and 5.1 MHz of bandwidth while only consuming 1 mA of supply current per channel. This ac performance is much higher than current competitive CMOS amplifiers. The rail-to-rail output swing and high output drive make these devices a good choice for driving the analog input or reference of analog-to-digital converters. These devices also have low distortion while driving a 600- load for use in telecom systems.

These amplifiers have a 360-µV input offset voltage, a 17 nV/Hz input noise voltage, and a 2-pA input bias current for measurement, medical, and industrial applications. The TLV277x family is also specified across an extended temperature range (-55°C to 125°C), making it useful for automotive systems.

These devices operate from a 2.5-V to 5.5-V single supply voltage and are characterized at 2.7 V and 5 V. The single-supply operation and low power consumption make these devices a good solution for portable applications.

The TLV277x CMOS operational amplifier family combines high slew rate and bandwidth, rail-to-rail output swing, high output drive, and excellent dc precision. The device provides 10.5 V/µs of slew rate and 5.1 MHz of bandwidth while only consuming 1 mA of supply current per channel. This ac performance is much higher than current competitive CMOS amplifiers. The rail-to-rail output swing and high output drive make these devices a good choice for driving the analog input or reference of analog-to-digital converters. These devices also have low distortion while driving a 600- load for use in telecom systems.

These amplifiers have a 360-µV input offset voltage, a 17 nV/Hz input noise voltage, and a 2-pA input bias current for measurement, medical, and industrial applications. The TLV277x family is also specified across an extended temperature range (-55°C to 125°C), making it useful for automotive systems.

These devices operate from a 2.5-V to 5.5-V single supply voltage and are characterized at 2.7 V and 5 V. The single-supply operation and low power consumption make these devices a good solution for portable applications.

Download

Technical documentation

star =Top documentation for this product selected by TI
No results found. Please clear your search and try again.
View all 1
Type Title Date
* Data sheet Family of 2.7 V High-Slew-Rate Rail-to-Rail Output Op Amps w/Shutdown datasheet (Rev. A) 06 Sep 2007

Ordering & quality

Information included:
  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
Information included:
  • Fab location
  • Assembly location

Support & training

TI E2E™ forums with technical support from TI engineers

Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.

If you have questions about quality, packaging or ordering TI products, see TI support. ​​​​​​​​​​​​​​