The SN74CB3Q3305 device is a high-bandwidth FET bus switch using a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports switching input voltage beyond the supply on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3305 device provides an optimized interface option designed for broadband communications, networking, and data-intensive computing systems.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE must be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.
| Top documentation | Type | Title | Format options | Date |
|---|---|---|---|---|
| * | Data sheet | SN74CB3Q3305 Dual FET Bus Switch 2.5V or 3.3V Low-Voltage High-Bandwidth Bus Switch datasheet (Rev. E) | PDF | HTML | Sep 21, 2026 |
| Application note | Selecting the Correct Texas Instruments Signal Switch (Rev. E) | PDF | HTML | Jun 2, 2022 | |
| Application note | Multiplexers and Signal Switches Glossary (Rev. B) | PDF | HTML | Dec 1, 2021 | |
| Application brief | Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) | PDF | HTML | Jan 6, 2021 |
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