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DRV8770

ACTIVE

100V H-bridge gate driver

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Data sheet

DRV8770

ACTIVE
Data sheet Order now

Product details

Number of full bridges 1 Vs (min) (V) 5 Vs ABS (max) (V) 115 Control mode Independent 1/2-Bridge Control interface Hardware (GPIO) Topology External FET Rating Catalog Operating temperature range (°C) -40 to 125
Number of full bridges 1 Vs (min) (V) 5 Vs ABS (max) (V) 115 Control mode Independent 1/2-Bridge Control interface Hardware (GPIO) Topology External FET Rating Catalog Operating temperature range (°C) -40 to 125
VQFN (RGE) 24 16 mm² 4 x 4
  • 100-V H-bridge gate driver
    • Drives N-channel MOSFETs (NMOS)
    • Gate driver supply (GVDD): 5-20 V
    • MOSFET supply (SHx) support up to 100 V
  • Integrated bootstrap diodes
  • Supports inverting and non-inverting INLx inputs (QFN package)
  • Bootstrap gate drive architecture
    • 750-mA source current
    • 1.5-A Sink current
  • Supports up to 15s battery powered applications
  • Low leakage current on SHx pins (<55 µA)
  • Absolute maximum BSTx voltage upto 115-V
  • Supports negative transients down to -22 V on SHx pins

  • Adjustable deadtime through DT pin in QFN package

  • Fixed Deadtime insertion of 200 ns in TSSOP package
  • Supports 3.3-V, and 5-V logic inputs with 20-V abs max
  • 4-ns typical propogation delay matching
  • Compact QFN and TSSOP packages and footprints
  • Efficient system design with Power Blocks
  • Integrated protection features
    • BST undervoltage lockout (BSTUV)
    • GVDD undervoltage (GVDDUV)
  • 100-V H-bridge gate driver
    • Drives N-channel MOSFETs (NMOS)
    • Gate driver supply (GVDD): 5-20 V
    • MOSFET supply (SHx) support up to 100 V
  • Integrated bootstrap diodes
  • Supports inverting and non-inverting INLx inputs (QFN package)
  • Bootstrap gate drive architecture
    • 750-mA source current
    • 1.5-A Sink current
  • Supports up to 15s battery powered applications
  • Low leakage current on SHx pins (<55 µA)
  • Absolute maximum BSTx voltage upto 115-V
  • Supports negative transients down to -22 V on SHx pins

  • Adjustable deadtime through DT pin in QFN package

  • Fixed Deadtime insertion of 200 ns in TSSOP package
  • Supports 3.3-V, and 5-V logic inputs with 20-V abs max
  • 4-ns typical propogation delay matching
  • Compact QFN and TSSOP packages and footprints
  • Efficient system design with Power Blocks
  • Integrated protection features
    • BST undervoltage lockout (BSTUV)
    • GVDD undervoltage (GVDDUV)

The DRV8770 device provides two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The integrated bootstrap diode and external capacitor generate the correct gate drive voltages for the high-side MOSFETs while the GVDD drives the gates of the low-side MOSFETs. The gate drive architecture supports gate drive currents up to 750-mA source and 1.5-A sink.

The high voltage tolerance of the gate drive pins improves system robustness. The SHx phase pins can tolerate significant negative voltage transients, while the high-side gate driver supply can support higher positive voltage transients (115-V absolute maximum) on the BSTx and GHx pins. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.

The DRV8770 device provides two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The integrated bootstrap diode and external capacitor generate the correct gate drive voltages for the high-side MOSFETs while the GVDD drives the gates of the low-side MOSFETs. The gate drive architecture supports gate drive currents up to 750-mA source and 1.5-A sink.

The high voltage tolerance of the gate drive pins improves system robustness. The SHx phase pins can tolerate significant negative voltage transients, while the high-side gate driver supply can support higher positive voltage transients (115-V absolute maximum) on the BSTx and GHx pins. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.
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Technical documentation

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* Data sheet DRV8770: 100-V Brushed DC Gate Driver datasheet PDF | HTML 29 Jun 2021
User guide DRV8770 100-V Gate Driver Evaluation Module PDF | HTML 29 Sep 2021
Certificate DRV8770EVM EU RoHS Declaration of Conformity (DoC) 16 Aug 2021

Design & development

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Evaluation board

DRV8770EVM — DRV8770 100-V gate driver evaluation module

The DRV8770 evaluation module (EVM) allows for easy evaluation of the DRV8770 device.

The DRV8770 device provides two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8770 is equipped with protection features such as BST undervoltage lockout, (...)

User guide: PDF | HTML
Not available on TI.com
Package Pins CAD symbols, footprints & 3D models
VQFN (RGE) 24 Ultra Librarian
TI's Standard Terms and Conditions for Evaluation Items apply.

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