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DRV5012

ACTIVE

Low power (as low as 3.3-µA), low voltage (up to 5.5-V) Hall effect latch

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Data sheet

DRV5012

ACTIVE
Data sheet Order now

Product details

Type Latch Operate point (typ) (mT) 2 Operate point (max) (mT) 3.3 Release point (min) (mT) -3.3 Supply current (µA) 1.3, 142 Bandwidth (kHz) 0.002, 0.02, 2.5 Rating Catalog Operating temperature range (°C) -40 to 85 Output Push-Pull output driver
Type Latch Operate point (typ) (mT) 2 Operate point (max) (mT) 3.3 Release point (min) (mT) -3.3 Supply current (µA) 1.3, 142 Bandwidth (kHz) 0.002, 0.02, 2.5 Rating Catalog Operating temperature range (°C) -40 to 85 Output Push-Pull output driver
X2SON (DMR) 4 1.54 mm² (1.4 mm × 1.1 mm)
  • Industry-Leading Low-Power Consumption
  • Pin-Selectable Sampling Rate:
    • SEL = Low: 20 Hz Using 1.3 µA (1.8 V)
    • SEL = High: 2.5 kHz Using 142 µA (1.8 V)
  • 1.65- to 5.5-V Operating VCC Range
  • High Magnetic Sensitivity: ±2 mT (Typical)
  • Robust Hysteresis: 4 mT (Typical)
  • Push-Pull CMOS Output
  • Small and Thin X2SON Package
  • –40°C to +85°C Operating Temperature Range
  • Industry-Leading Low-Power Consumption
  • Pin-Selectable Sampling Rate:
    • SEL = Low: 20 Hz Using 1.3 µA (1.8 V)
    • SEL = High: 2.5 kHz Using 142 µA (1.8 V)
  • 1.65- to 5.5-V Operating VCC Range
  • High Magnetic Sensitivity: ±2 mT (Typical)
  • Robust Hysteresis: 4 mT (Typical)
  • Push-Pull CMOS Output
  • Small and Thin X2SON Package
  • –40°C to +85°C Operating Temperature Range

The DRV5012 device is an ultra-low-power digital-latch Hall effect sensor with a pin-selectable sampling rate. ™

When a south magnetic pole is near the top of the package and the BOP threshold is exceeded, the device drives a low voltage. The output stays low until a north pole is applied and the BRP threshold is crossed, which causes the output to drive a high voltage. Alternating north and south poles are required to toggle the output, and integrated hysteresis separates BOP and BRP to provide robust switching.

Using an internal oscillator, the DRV5012 device samples the magnetic field and updates the output at a rate of 20 Hz or 2.5 kHz, depending on the SEL pin. This dual-bandwidth feature can allow systems to monitor changes in movement while using minimal power.

The device operates from a VCC range of 1.65 V to 5.5 V, and is packaged in a small X2SON.

The DRV5012 device is an ultra-low-power digital-latch Hall effect sensor with a pin-selectable sampling rate. ™

When a south magnetic pole is near the top of the package and the BOP threshold is exceeded, the device drives a low voltage. The output stays low until a north pole is applied and the BRP threshold is crossed, which causes the output to drive a high voltage. Alternating north and south poles are required to toggle the output, and integrated hysteresis separates BOP and BRP to provide robust switching.

Using an internal oscillator, the DRV5012 device samples the magnetic field and updates the output at a rate of 20 Hz or 2.5 kHz, depending on the SEL pin. This dual-bandwidth feature can allow systems to monitor changes in movement while using minimal power.

The device operates from a VCC range of 1.65 V to 5.5 V, and is packaged in a small X2SON.
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Technical documentation

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Top documentation Type Title Format options Date
* Data sheet DRV5012 Ultra-Low-Power Digital-Latch Hall-Effect Sensor datasheet PDF | HTML Aug 18, 2017
Application brief Introduction to TI Magnetic Sense Simulator Features PDF | HTML Dec 5, 2023
User guide Texas Instruments' Magnetic Sense Simulator User's Guide PDF | HTML Dec 4, 2023
Application note Design Considerations & Measurement Results, Mechanical Hall-Effect Flow Meters PDF | HTML Mar 23, 2022
Application brief Using Hall-Effect Latches in Motorized Window Blinds PDF | HTML Mar 22, 2022
Application brief Designing With Hall-Effect Sensors for Rotary Flow Meter Applications PDF | HTML Mar 7, 2022
Application brief Incremental Rotary Encoders (Rev. B) PDF | HTML Dec 2, 2021
Application brief Two-State Selector Using Hall-Effect Sensors PDF | HTML Dec 1, 2021
Application brief Hall-Effect Sensors in Low-Power Applications (Rev. B) PDF | HTML Oct 15, 2021
Technical article You can be an electromechanical engineer PDF | HTML Nov 10, 2017

Design & development

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Evaluation board

DRV5011-5012EVM — DRV5011 and DRV5012 Ultra-Low Power, Digital-Latch Hall Effect Sensor Evaluation Module

The DRV5011-5012EVM facilitates evaluation of the DRV5012 and DRV5011 Hall effect sensors. The DRV5012 is an ultra-low-power digital-latch Hall effect sensor with a pin-selectable sampling rate. The DRV5011 is an ultra-low-power digital-latch Hall effect sensor.  These sensors (...)
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The TI-MAGNETIC-SENSE-SIMULATOR (TIMSS) webtool estimates magnetic flux density and TI magnetic sensor outputs for magnetic position sensing systems. Select from our portfolio of magnetic sensors to thoroughly emulate electro-mechanical performance of your design. The tool supports various magnet (...)
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