The LMG3650 daughtercard features two LMG3650R070 650V GaN FETs with an integrated driver and protection in a half-bridge configuration with all the required bias circuit and logic/power level shifting. Essential power stage and gate-driving, high-frequency current loops are fully enclosed on the board to minimize power-loop parasitic inductance for reducing voltage overshoots and improving performance. The daughtercard is configured for a socket-style external connection for easy interface with external power stages to run the LMG3650R070 in various applications. Refer to the LMG3650R070 data sheet before using this daughtercard.
LMG3650R070 daughtercard
| Type | Title | Date | ||
|---|---|---|---|---|
| EVM User's guide | LMG3650R070 Evaluation Module | PDF | HTML | 17 Jan 2025 | |
| Certificate | LMG3650EVM-115 EU Declaration of Conformity (DoC) | 16 Dec 2024 |
Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.
If you have questions about quality, packaging or ordering TI products, see TI support.