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UC3610

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具有 3A 峰值正向电流的双通道肖特基二极管电桥

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UC3610

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产品详情

Rating Catalog Operating temperature range (°C) 0 to 70
Rating Catalog Operating temperature range (°C) 0 to 70
PDIP (P) 8 92.5083 mm² 9.81 x 9.43 SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • Monolithic Eight-Diode Array
  • Exceptional Efficiency
  • Low Forward Voltage
  • Fast Recovery Time
  • High Peak Current
  • Small Size
  • Monolithic Eight-Diode Array
  • Exceptional Efficiency
  • Low Forward Voltage
  • Fast Recovery Time
  • High Peak Current
  • Small Size

This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection makes this device particularly applicable to bipolar driven stepper motors.

The use of Schottky diode technology features high efficiency through lowered forward voltage drop and decreased reverse recovery time.

This single monolithic chip is fabricated in both hermetic CERDIP and copper-leaded plastic packages. The UC1610 in ceramic is designed for -55°C to 125°C environments but with reduced peak current capability. The UC2610 in plastic and ceramic is designed for -25°C to 125°C environments also with reduced peak current capability; while the UC3610 in plastic has higher current rating over a 0°C to 70°C temperature range.

This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection makes this device particularly applicable to bipolar driven stepper motors.

The use of Schottky diode technology features high efficiency through lowered forward voltage drop and decreased reverse recovery time.

This single monolithic chip is fabricated in both hermetic CERDIP and copper-leaded plastic packages. The UC1610 in ceramic is designed for -55°C to 125°C environments but with reduced peak current capability. The UC2610 in plastic and ceramic is designed for -25°C to 125°C environments also with reduced peak current capability; while the UC3610 in plastic has higher current rating over a 0°C to 70°C temperature range.
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类型 标题 下载最新的英语版本 日期
* 数据表 Dual Schottky Diode Bridge 数据表 (Rev. B) 2004年 12月 7日
应用手册 ESD 包装和布局指南 (Rev. B) PDF | HTML 英语版 (Rev.B) PDF | HTML 2022年 9月 14日
用户指南 Generic ESD Evaluation Module User's Guide (Rev. A) PDF | HTML 2021年 9月 27日

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评估板

ESDEVM — ESD 评估模块

静电敏感器件 (ESD) 评估模块 (EVM) 是用于 TI 大部分 ESD 产品系列的开发平台。为了测试任何型号的器件，该电路板支持所有传统的 ESD 封装结构。器件可以焊接到相应封装结构，然后进行测试。如果是典型的高速 ESD 二极管，则应采用阻抗受控布局来获取 S 参数并剥离电路板引线。如果是非高速 ESD 二极管，则应采用有布线连接到测试点的封装结构，以便轻松运行直流测试，例如击穿电压、保持电压、漏电流等。该电路板布局布线还可以通过将信号引脚短接至信号所在的位置，轻松地将任何器件引脚连接到电源 (VCC) 或地。
用户指南: PDF | HTML
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封装 引脚 CAD 符号、封装和 3D 模型
PDIP (P) 8 Ultra Librarian
SOIC (DW) 16 Ultra Librarian
应遵守 TI 评估类商品的标准条款与条件。

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包含信息：
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息：
  • 制造厂地点
  • 封装厂地点

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