VID TBD-01XE
Radiation - Total Ionizing Dose (TID):
- TID characterized up to 50 krad(Si)
- TID performance assurance up to 30 krad(Si)
- Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30 krad(Si)
Radiation - Single-Event Effects (SEE):
- Single Event Latch-Up (SEL) immune up to 50 MeV-cm2/mg at 125°C
- Single Event Transient (SET) characterized up to LET = 50 MeV-cm2/mg
Wide operating range of 1.2V to 5.5V
5.5V tolerant input pins
Supports standard pinouts
Up to 150Mbps with 5V or 3.3V VCC
Latch-up performance exceeds 100mA per JESD 78
Space enhanced plastic:
- Supports Defense and Aerospace Applications
- Controlled baseline
- Au bondwire and NiPdAu lead finish
- Meets NASA ASTM E595 outgassing specification
- One fabrication, assembly, and test site
- Extended product life cycle
- Product traceability

VID TBD-01XE
Radiation - Total Ionizing Dose (TID):
- TID characterized up to 50 krad(Si)
- TID performance assurance up to 30 krad(Si)
- Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30 krad(Si)
Radiation - Single-Event Effects (SEE):
- Single Event Latch-Up (SEL) immune up to 50 MeV-cm2/mg at 125°C
- Single Event Transient (SET) characterized up to LET = 50 MeV-cm2/mg
Wide operating range of 1.2V to 5.5V
5.5V tolerant input pins
Supports standard pinouts
Up to 150Mbps with 5V or 3.3V VCC
Latch-up performance exceeds 100mA per JESD 78
Space enhanced plastic:
- Supports Defense and Aerospace Applications
- Controlled baseline
- Au bondwire and NiPdAu lead finish
- Meets NASA ASTM E595 outgassing specification
- One fabrication, assembly, and test site
- Extended product life cycle
- Product traceability

The SN54SC1G125-SEP is a single line driver with a 3-state output. The output is disabled when the output-enable (OE) input pin is at a logic high level. When (OE) is at a logic low level, true data is passed from the A input to the Y output.

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