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TS3USB30E

ACTIVE

High-Speed USB 2.0 1:2 Mux/Demux Switch With Single Enable and ESD Protection

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Data sheet

TS3USB30E

ACTIVE
Data sheet Order now

Product details

Protocols USB 2.0 Configuration 2:1 SPDT Number of channels 2 USB speed (Mbps) 480 Bandwidth (MHz) 900 Supply voltage (max) (V) 4.3 Supply voltage (min) (V) 3 Ron (typ) (mΩ) 6000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 4.3 ESD HBM (typ) (kV) 8 Operating temperature range (°C) -40 to 85 COFF (typ) (pF) 2 CON (typ) (pF) 7.5 Off isolation (typ) (dB) -40 OFF-state leakage current (max) (µA) 1 Ron (max) (mΩ) 10000 Ron channel match (max) (Ω) 0.35 Turnoff time (disable) (max) (ns) 25 Turnon time (enable) (max) (ns) 30 Rating Catalog
Protocols USB 2.0 Configuration 2:1 SPDT Number of channels 2 USB speed (Mbps) 480 Bandwidth (MHz) 900 Supply voltage (max) (V) 4.3 Supply voltage (min) (V) 3 Ron (typ) (mΩ) 6000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 4.3 ESD HBM (typ) (kV) 8 Operating temperature range (°C) -40 to 85 COFF (typ) (pF) 2 CON (typ) (pF) 7.5 Off isolation (typ) (dB) -40 OFF-state leakage current (max) (µA) 1 Ron (max) (mΩ) 10000 Ron channel match (max) (Ω) 0.35 Turnoff time (disable) (max) (ns) 25 Turnon time (enable) (max) (ns) 30 Rating Catalog
UQFN (RSW) 10 2.52 mm² 1.8 x 1.4 VSSOP (DGS) 10 14.7 mm² 3 x 4.9
  • VCC operation at 2.7V to 4.3V
  • D+/D– pins tolerate up to 5.25V
  • 1.8V compatible control-pin inputs
  • IOFF supports partial power-down-mode operation
  • RON = 10Ω maximum
  • ΔRON = 0.35Ω typical
  • Cio(ON) = 7.5pF typical
  • Low power consumption (70nA maximum)
  • –3dB bandwidth = 1400MHz typical
  • Latch-up performance exceeds 100mA per JESD 78, Class II (1)
  • ESD performance tested per JESD 22
    • 8000V human-body model (A114-B, Class II)
    • 1000V charged-device model (C101)
  • ESD performance I/O port to GND (2)
    • 15000V human-body model
  • Packaged in 10-pin UQFN (1.8mm × 1.4mm)

(1)Except OE and S inputs

(2)High-voltage HBM is performed in addition to the standard HBM testing (A114-B, Class II) and applies to I/O ports tested with respect to GND only.
  • VCC operation at 2.7V to 4.3V
  • D+/D– pins tolerate up to 5.25V
  • 1.8V compatible control-pin inputs
  • IOFF supports partial power-down-mode operation
  • RON = 10Ω maximum
  • ΔRON = 0.35Ω typical
  • Cio(ON) = 7.5pF typical
  • Low power consumption (70nA maximum)
  • –3dB bandwidth = 1400MHz typical
  • Latch-up performance exceeds 100mA per JESD 78, Class II (1)
  • ESD performance tested per JESD 22
    • 8000V human-body model (A114-B, Class II)
    • 1000V charged-device model (C101)
  • ESD performance I/O port to GND (2)
    • 15000V human-body model
  • Packaged in 10-pin UQFN (1.8mm × 1.4mm)

(1)Except OE and S inputs

(2)High-voltage HBM is performed in addition to the standard HBM testing (A114-B, Class II) and applies to I/O ports tested with respect to GND only.

The TS3USB30E is a high-bandwidth 1:2 switch specially designed for the switching of high-speed USB 2.0 signals in handset and consumer applications, such as cell phones, digital cameras, and notebooks with hubs or controllers with limited USB I/Os. The wide bandwidth (1400MHz) of this switch allows signals to pass with minimum edge and phase distortion. The device multiplexes differential outputs from a USB host device to one of two corresponding outputs, or from two different hosts to one corresponding output. The switch is bidirectional and offers little or no attenuation of the high-speed signals at the outputs. The TS3USB30E is designed for low bit-to-bit skew and high channel-to-channel noise isolation, and is compatible with various standards, such as high-speed USB 2.0 (480Mbps).

The TS3USB30E integrates ESD protection cells on all pins, is available in a tiny UQFN package (1.8mm × 1.4mm) or a VSSOP package, and is characterized over the free-air temperature range of –40°C to 85°C.

The TS3USB30E is a high-bandwidth 1:2 switch specially designed for the switching of high-speed USB 2.0 signals in handset and consumer applications, such as cell phones, digital cameras, and notebooks with hubs or controllers with limited USB I/Os. The wide bandwidth (1400MHz) of this switch allows signals to pass with minimum edge and phase distortion. The device multiplexes differential outputs from a USB host device to one of two corresponding outputs, or from two different hosts to one corresponding output. The switch is bidirectional and offers little or no attenuation of the high-speed signals at the outputs. The TS3USB30E is designed for low bit-to-bit skew and high channel-to-channel noise isolation, and is compatible with various standards, such as high-speed USB 2.0 (480Mbps).

The TS3USB30E integrates ESD protection cells on all pins, is available in a tiny UQFN package (1.8mm × 1.4mm) or a VSSOP package, and is characterized over the free-air temperature range of –40°C to 85°C.
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Technical documentation

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* Data sheet TS3USB30E ESD-Protected, High-Speed USB 2.0 (480Mbps) 1:2 Multiplexer/Demultiplexer Switch With Single Enable datasheet (Rev. G) PDF | HTML 28 Oct 2024
Application note High-Speed Layout Guidelines for Signal Conditioners and USB Hubs (Rev. A) PDF | HTML 08 Jan 2026
Application note Passive Mux Selection Based On Bandwidth (Rev. A) PDF | HTML 31 Jul 2024

Design & development

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Simulation model

TS3USB30E S-Parameter Model

SCDM186.ZIP (130 KB) - S-Parameter Model
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Package Pins CAD symbols, footprints & 3D models
UQFN (RSW) 10 Ultra Librarian
VSSOP (DGS) 10 Ultra Librarian
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