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SN55LVTA4-SEP

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Radiation-tolerant quad-channel high-speed differential line driver

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Data sheet

SN55LVTA4-SEP

ACTIVE
Data sheet Order now

Product details

Function Driver Protocols LVDS Number of transmitters 4 Number of receivers 0 Supply voltage (V) 3.3 Signaling rate (Mbps) 400 Input signal LVTTL Output signal LVDS Rating Space Operating temperature range (°C) -55 to 125
Function Driver Protocols LVDS Number of transmitters 4 Number of receivers 0 Supply voltage (V) 3.3 Signaling rate (Mbps) 400 Input signal LVTTL Output signal LVDS Rating Space Operating temperature range (°C) -55 to 125
SOIC (D) 16 59.4 mm² 9.9 x 6
  • VID V62/25605-01XE
  • Total ionizing dose characterized at 30krad (Si)
    • Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30krad (Si)
  • Single-event effects (SEE) characterized:
    • Single event latch-up (SEL) immune to linear energy transfer (LET) = 50MeV-cm2 /mg
    • Single event transient (SET) characterized to 50MeV-cm2/mg.
  • Meet or exceed the requirements of ANSI TIA/EIA-644 standard
  • Low-voltage differential signaling with typical output voltage of 350mV and 100Ω load
  • Typical output voltage rise and fall times of 500ps (400Mbps)
  • Typical propagation delay times of 1.7ns
  • Operate from a single 3.3V supply
  • Power dissipation 25mW typical per driver at 200MHz
  • Driver at high impedance when disabled or with VCC = 0
  • Bus-terminal ESD protection exceeds 8kV
  • Low-voltage TTL (LVTTL) logic input levels
  • Cold sparing for space and high reliability applications requiring redundancy
  • Space enhanced plastic (SEP)
    • Controlled baseline
    • Gold wire, NiPdAu lead finish
    • One assembly and test site, one fabrication site
    • Extended product life cycle
    • Military (–55°C to 125°C) temperature range
    • Product traceability
    • Meets NASA ASTM E595 outgassing specification
  • VID V62/25605-01XE
  • Total ionizing dose characterized at 30krad (Si)
    • Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30krad (Si)
  • Single-event effects (SEE) characterized:
    • Single event latch-up (SEL) immune to linear energy transfer (LET) = 50MeV-cm2 /mg
    • Single event transient (SET) characterized to 50MeV-cm2/mg.
  • Meet or exceed the requirements of ANSI TIA/EIA-644 standard
  • Low-voltage differential signaling with typical output voltage of 350mV and 100Ω load
  • Typical output voltage rise and fall times of 500ps (400Mbps)
  • Typical propagation delay times of 1.7ns
  • Operate from a single 3.3V supply
  • Power dissipation 25mW typical per driver at 200MHz
  • Driver at high impedance when disabled or with VCC = 0
  • Bus-terminal ESD protection exceeds 8kV
  • Low-voltage TTL (LVTTL) logic input levels
  • Cold sparing for space and high reliability applications requiring redundancy
  • Space enhanced plastic (SEP)
    • Controlled baseline
    • Gold wire, NiPdAu lead finish
    • One assembly and test site, one fabrication site
    • Extended product life cycle
    • Military (–55°C to 125°C) temperature range
    • Product traceability
    • Meets NASA ASTM E595 outgassing specification

The SN55LVTA4-SEP is a differential line driver that implements the electrical characteristics of low-voltage differential signaling (LVDS) with a 3.3V supply. This driver delivers a minimum differential output voltage magnitude of 247mV into a 100Ω load when enabled.

The intended application of this device and signaling technique is both point-to-point and multi-drop (one driver and multiple receivers) data transmission over controlled impedance media of approximately 100Ω. The transmission media can be printed-circuit board traces, backplanes, or cables. The ultimate rate and distance of data transfer is dependent upon the attenuation characteristics of the media and the noise coupling to the environment.

The SN55LVTA4-SEP is characterized for operation from –55°C to 125°C.

The SN55LVTA4-SEP is a differential line driver that implements the electrical characteristics of low-voltage differential signaling (LVDS) with a 3.3V supply. This driver delivers a minimum differential output voltage magnitude of 247mV into a 100Ω load when enabled.

The intended application of this device and signaling technique is both point-to-point and multi-drop (one driver and multiple receivers) data transmission over controlled impedance media of approximately 100Ω. The transmission media can be printed-circuit board traces, backplanes, or cables. The ultimate rate and distance of data transfer is dependent upon the attenuation characteristics of the media and the noise coupling to the environment.

The SN55LVTA4-SEP is characterized for operation from –55°C to 125°C.
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Technical documentation

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Top documentation Type Title Format options Date
* Data sheet SN55LVTA4-SEP Radiation Tolerant Quad Channel High-Speed Differential Line Driver datasheet (Rev. A) PDF | HTML 30 Jun 2025
* VID SN55LVTA4-SEP VID SN55LVTA4-SEP VID V62/25605 05 May 2026
* Radiation & reliability report SN55LVTA4-SEP Single-Event Effects (SEE) Radiation Report PDF | HTML 23 Jun 2025
* Radiation & reliability report SN55LVTA4-SEP Total Ionizing Dose (TID) Report PDF | HTML 23 Jun 2025
* Radiation & reliability report SN55LVTA4-SEP Production Flow and Reliability Report PDF | HTML 03 Jun 2025
Selection guide TI Space Products (Rev. L) 27 Mar 2026

Design & development

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Evaluation board

SN65LVDS31-33EVM — Evaluation Module for SN65LVDS31 and SN65LVDS33

TI offers a series of low-voltage differential signaling (LVDS) evaluation modules (EVMs) designed for analysis of the electrical characteristics of LVDS drivers and receivers. Four unique EVMs are available to evaluate the different classes of LVDS devices offered by TI.

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SN65LVDS31 IBIS Model (Rev. B)

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TINA-TI — SPICE-based analog simulation program

TINA-TI provides all the conventional DC, transient and frequency domain analysis of SPICE and much more. TINA has extensive post-processing capability that allows you to format results the way you want them. Virtual instruments allow you to select input waveforms and probe circuit nodes voltages (...)
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