Gallium nitride (GaN) motor drivers
Maximize power efficiency and minimize solution size with gallium nitride (GaN) intelligent power modules (IPMs) and half-bridge motor drivers
カテゴリ別の参照
Find your GaN motor driver by voltage
650V GaN IPMs
Maximize power density and efficiency using our high-voltage GaN IPM device
<200V GaN half-bridge drivers
Enhance efficiency and minimize solution size with our medium-voltage GaN half-bridge device
Related categories
Benefits of our GaN motor drivers
Increase system efficiency
Our GaN motor drivers integrate low on-resistance GaN FETs, delivering up to 2% higher power efficiency and cutting power losses by 50% or more compared to silicon-based technologies.
Extend motor-drive lifetimes
Integrated slew-rate control and multilevel protection minimize motor heating, maximize power efficiency, and enhance insulation over a motor’s lifetime. Delivering peak performance and durability.
Enable quiet and smooth motor operation
Achieve quieter operation and smoother torque with TI GaN through higher switching frequencies, low propagation delay, and minimized current harmonics with low dead time.
Minimize solution size by 50%
Shrink your system footprint with GaN by delivering ultra-high power density and reducing external system components for more compact, efficient designs compared to silicon.
Featured technologies
Introduction to GaN IPMs
Intelligent power modules (IPMs) built with gallium nitride (GaN) enable higher power density and efficiency compared with traditional silicon metal-oxide semiconductor field-effect transistors and insulated gate bipolar transistors.
Benefits:
- >99% efficiency in the power stage eliminates the need for cooling components such as heat sinks, improving overall efficiency and reducing motor-driver system size.
- <150ns dead time and propagation delay, along with higher pulse-width modulation switching frequencies, reduces current distortion to improve acoustic performance.