The TPSI8830 is an isolated solid-state relay designed for industrial
applications. The TPSI8830 uses TIs high reliability
capacitive isolation technology in combination with internal back-to-back MOSFETs to
form a completely integrated option requiring no secondary side power supply. The
TPSI8830 improves system reliability as TIs
capacitive isolation technology does not suffer from mechanical wear-out or photo
degradation failure modes common in mechanical relay and photo relay components.
The primary side of the device is
powered by only 5mA of input current and incorporates a fail-safe EN pin
preventing any possibility of back powering the VDD supply. In most applications,
the VDD pin of the device must connect to a system supply from 3.0V to 5.5V and the
EN pin of the
device must be driven by a GPIO output with logic HI from 1.8V to 5.5V. In other
applications, the VDD and
EN pins can be driven together directly from the system supply or from a
GPIO output.
The secondary side
consists of back-to-back MOSFETs with a standoff voltage of ±80V from S1 to S2. The TPSI8830 integrates bidirectional overcurrent
protection to prevent damage due to output miswiring or short to ground.
The TPSI8830 is an isolated solid-state relay designed for industrial
applications. The TPSI8830 uses TIs high reliability
capacitive isolation technology in combination with internal back-to-back MOSFETs to
form a completely integrated option requiring no secondary side power supply. The
TPSI8830 improves system reliability as TIs
capacitive isolation technology does not suffer from mechanical wear-out or photo
degradation failure modes common in mechanical relay and photo relay components.
The primary side of the device is
powered by only 5mA of input current and incorporates a fail-safe EN pin
preventing any possibility of back powering the VDD supply. In most applications,
the VDD pin of the device must connect to a system supply from 3.0V to 5.5V and the
EN pin of the
device must be driven by a GPIO output with logic HI from 1.8V to 5.5V. In other
applications, the VDD and
EN pins can be driven together directly from the system supply or from a
GPIO output.
The secondary side
consists of back-to-back MOSFETs with a standoff voltage of ±80V from S1 to S2. The TPSI8830 integrates bidirectional overcurrent
protection to prevent damage due to output miswiring or short to ground.