The TPS7H6200-SEP is a 15V e-mode GaN power-FET with integrated gate driver featuring tri-state PWM compatibility, integrated low side current sense, overtemperature protection, and overcurrent protection.
The GaN FET half-bridge die combines the high-side and low-side GaN FETs on one substrate, minimizing parasitic inductance. The device is asymmetrically sized for point-of-load voltage conversion, 1mΩ on the low side and 3mΩ on the high side, optimizing performance and efficiency for typical input to output conversion ratios. As a result, the TPS7H6200-SEP can achieve efficiencies exceeding 89.6% at a typical load of 20A.
| Top documentation | Type | Title | Format options | Date |
|---|---|---|---|---|
| * | Data sheet | TPS7H6200-SEP Radiation-Tolerant 52A GaN Half-Bridge Power Stage with Low-Side Current Sense datasheet | PDF | HTML | Sep 23, 2026 |
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The TPS7H5101-SEP evaluation module (EVM) is a dual-phase D-CAP+™ buck converter meant for high current loads at low output voltages. The controller is optimized for 80A at 0.8V for point-of-load power delivery, using two TPS7H6200-SEP devices to accomplish the power conversion. The EVM uses (...)
| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| WQFN-FCRLF (VEJ) | 49 | Ultra Librarian |
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