The LMG341xR150 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The inherent advantages of this device over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
The LMG341xR150 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero VDS ringing, less than 100-ns current limiting response self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.
| Top documentation | Type | Title | Format options | Date |
|---|---|---|---|---|
| * | Data sheet | LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection datasheet (Rev. B) | PDF | HTML | Feb 13, 2020 |
| Product overview | HVDC QFN-Packaged GaN Power Devices | PDF | HTML | Mar 31, 2026 | |
| White paper | Achieving GaN Products With Lifetime Reliability | PDF | HTML | Jun 2, 2021 | |
| White paper | Achieve Power-Dense and Efficient Digital Power Systems by Combining TI GaN FETs | Jan 5, 2021 | ||
| More literature | A Generalized Approach to Determine the Switching Lifetime of a GaN FET | Oct 20, 2020 | ||
| Analog design Journal | Wide-bandgap semiconductors: Performance and benefits of GaN versus SiC | Sep 22, 2020 | ||
| Application note | Thermal Considerations for Designing a GaN Power Stage (Rev. B) | Aug 4, 2020 |
For additional terms or required resources, click any title below to view the detail page where available.
The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG341x half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. This EVM is (...)
| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| VQFN (RWH) | 32 | Ultra Librarian |
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