The JFE2325 is a monolithic, matched-pair discrete JFET intended for use with very high-impedance sensors such as electret condenser microphones (ECMs). The device consists of two N-channel JFETs, laid out for excellent matching on a single die. The gate of each JFET is biased by an integrated diode which allows for direct coupling of a signal source to the gate without the need for a biasing resistor. The JFE2325 achieves much higher input impedance (>400GOhm) than possible if discrete resistors were used to bias the gate. Furthermore, the JFE2325 features an extremely low input capacitance of 0.85pF per JFET which maximizes signal levels from transducers with extremely low output capacitance.
Each JFET is capable of 0.7mS of transconductance when configured to run at the full drain current of 385µA. The JFETs can be used individually, or in parallel for higher transconductance and lower noise.
The JFE2325 can withstand a high gate-to-drain voltage of 30V. The temperature range is specified from –40°C to +125°C.
| Top documentation | Type | Title | Format options | Date |
|---|---|---|---|---|
| * | Data sheet | JFE2325 Dual, Low-Power, N-Channel JFET for Electret Microphones datasheet (Rev. A) | PDF | HTML | 18 Jun 2026 |
| EVM User's guide | JFE2325 Evaluation Module User's Guide | PDF | HTML | 09 Dec 2025 |
For additional terms or required resources, click any title below to view the detail page where available.
| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| X2SON (DTQ) | 6 | Ultra Librarian |
Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.
If you have questions about quality, packaging or ordering TI products, see TI support.