GaN FETs offer many benefits over MOSFETs in terms of switching characteristics. However, GaN FETs also come with some unique challenges that must be solved to achieve the best performance. One of these challenges is bootstrap overcharge in half-bridge topologies.

There are a variety of methods used by circuit designers to solve bootstrap overcharge. This document compares these methods of bootstrap overcharge prevention, including methods integrated in half-bridge GaN drivers such as LMG1205, LM5113-Q1, and LMG1210.