• Radiation performance:
  • SEL, SEB, and SEGR immune up to
    LET = 43 MeV-cm²/mg
  • SET and SEFI characterized up to
    LET = 43 MeV-cm²/mg
  • TID assured for every wafer lot up to
    50 krad(Si)
• Peak efficiency: 94% (V_O = 1 V at 100 kHz)
• Integrated 17-mΩ and 9-mΩ MOSFETs
• Power rail: 3 V to 7 V on VIN
• Flexible switching frequency options:
  • 100-kHz to 1-MHz adjustable internal oscillator
  • External sync capability: 100 kHz to 1 MHz
  • SYNC pins can be configured as 500-kHz clocks at 90° out of phase to parallel up to
    4 devices
• 0.6-V ±1.7% voltage reference over temperature, radiation, and line and load regulation
• Monotonic start-up into prebiased outputs
• Adjustable slope compensation and soft-start
• Adjustable input enable and power-good output for power sequencing
• 44-pin PowerPAD™ HTSSOP package
• Space Enhanced Plastic:
  • Controlled baseline
  • Au bondwire and NiPdAu lead finish
  • Enhanced mold compound for low outgassing
  • One fabrication, assembly, and test site
  • Extended product life cycle
  • Extended product change notification
  • Product traceability

• Space satellite point of load supply
• Communications payload
• Optical imaging payload

The TPS7H4003-SEP is a radiation-tolerant, 7-V, 18-A synchronous buck converter with integrated low-resistance high-side and low-side MOSFETs in a thermally enhanced 34-pin ceramic flatpack package. High efficiency and reduced component count are achieved through current mode control.

The output voltage start-up ramp is controlled by the SS/TR pin which allows operation as either a stand alone power supply or in tracking situations. Power sequencing is possible by correctly configuring the enable and the power good pins. The TPS7H4003-SEP can be configured in primary-secondary mode and with the SYNC2 pin, four devices can be configured in parallel without an external clock.

Cycle-by-cycle current limiting on the high-side FET protects the device in overload situations and is enhanced by a low-side sourcing current protection which prevents current runaway. There is also a low-side sinking current protection which turns off the low-side MOSFET to prevent excessive reverse current. Thermal shutdown disables the part when die temperature exceeds thermal limit.