The purpose of this study is to characterize the single-event-effect (SEE) performance due to heavy-ion irradiation of the DP83561-SP. Heavy-ions with LETEFF ranging from 8 to 121 MeV × cm2/ mg were used to irradiate production RHA devices in the experiments with fluences up to 106. The results demonstrated that the DP83561-SP is SEL-free up to 121 MeV × cm2/ mg at T = 125°C. The SET cross section and BER calculations are presented across different LETs.
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The DP83561-SP is a high reliability gigabit ethernet PHY designed for the high-radiation environment of space. The DP83561-SP is a low power, fully featured physical layer transceiver with integrated PMD sub-layers to support 10BASE-Te, 100BASE-TX and 1000BASE-T Ethernet protocols. The DP83561-SP is designed for easy implementation of 10/100/1000Mbps Ethernet LANs in extremely hostile environments. The device interfaces to twisted pair media through an external transformer. This device interfaces to the MAC layer through Reduced GMII (RGMII) and MII. The following are some of the device features:
See the DP83561-SP Data Sheet for the full list of device features.
The device is Radiation Hardened by Design (RHBD), fabricated by Texas Instruments using a CMOS process, and is available in 64-pin Ceramic Quad Flat Pack (CQFP) package, with a 11mm × 11mm body size (nominal). Visit the DP83561-SP product page for more detailed technical specifications, user's guides, and application notes.
| DESCRIPTION (1) | DEVICE INFORMATION (1) |
|---|---|
| TI Part Number | DP83561-SP |
| Orderable Name | 5962021601VXC |
| Device Function | Ethernet PHY Transceiver |
| Technology | Ethernet |
| Exposure Facility | Radiation Effects Facility, Cyclotron Institute, Texas A&M University |
| Irradiation Temperature | 25°C and 125°C (For SEL Testing) |