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  • BQ76952 High-Voltage Stress Report

    • SLUAAD4 February   2021 BQ76952 , BQ76972

       

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  • BQ76952 High-Voltage Stress Report
  1.   Trademarks
  2. 1Introduction
  3. 2Setup
  4. 3Measurement Data
    1. 3.1 Graphical Data
  5. 4Summary
  6. 5References
  7. IMPORTANT NOTICE
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APPLICATION NOTE

BQ76952 High-Voltage Stress Report

Trademarks

All trademarks are the property of their respective owners.

1 Introduction

The BQ76952 family of battery monitors supports battery pack configurations with up to 16-series cells. The production data sheet for this family specifies an absolute maximum voltage limit of 85 V on select high voltage pins, with a recommended maximum voltage level of 80 V. A stack of 16 lithium-ion cells with maximum voltage of, for example, 4.2 V, would result in a top-of-stack voltage of 67.2 V.

The device also incorporates high-side NFET drivers with an integrated charge pump, which has a programmable typical voltage of 5.7 V or 11 V, and a maximum level of 7 V or 13 V, respectively. This means with a fully charged battery pack and NFET drivers enabled, the voltage on the driver pins can reach a maximum level of 67.2 V + 7 V = 74.2 V or 67.2 V + 13 = 80.2 V during operation.

However, in some systems the top-of-stack voltage may experience transients due to dynamic charge or discharge events, which may result in brief voltages exceeding these levels during operation. TI does not warranty device operation under conditions in excess of the limits specified in the production data sheet. For informational purposes, an experiment was performed by exposing a population of BQ76952 devices to excessive voltage levels, with the results described in the following sections.

2 Setup

To evaluate the effect of high-voltage stress on the device, a set of 35 devices were tested using the procedure described below.

  1. The devices were first tested, and selected parameters were logged for later comparison.
  2. The OTP in each device was programmed such that the charge pump would be powered and the high-side CHG and DSG protection FET drivers would be enabled by default during the testing.
  3. Selected pins on each device were connected through passive components to a single voltage source (initially set to 0 V), as shown in the schematic in Figure 2-1.
  4. The circuit was placed into an oven and the voltage source was slowly ramped from 0 V to 120 V with a rise time of approximately 5 seconds. The voltage source was limited to an output current of 5 mA.
  5. With the 120-V source held constant, the oven was heated to 85°C over the course of approximately 10 minutes.
  6. The voltage source was powered down, and the devices were removed from the oven.
  7. Devices were retested, and the selected parameters were logged and compared to those taken earlier.

GUID-54BADEA0-C050-4AA2-92C3-9732A08C87A2-low.svg Figure 2-1 Schematic of System Used for Voltage Stress

 

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