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  • HEV/EV Traction Inverter Design Guide Using Isolated IGBT and SiC Gate Drivers

    • SLUA963B June   2020  – October 2022 UCC21710-Q1 , UCC21732-Q1 , UCC5870-Q1

       

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  • HEV/EV Traction Inverter Design Guide Using Isolated IGBT and SiC Gate Drivers
  1.   HEV/EV Traction Inverter Design Guide Using Isolated IGBT and SiC Gate Drivers
  2. 1Introduction
  3. 2HEV/EV Overview
    1. 2.1 HEV/EV Architectures
    2. 2.2 HEV/EV Traction Inverter System Architecture
    3. 2.3 HEV/EV Traction Inverter System Performance Impact
  4. 3Design of HEV/EV Traction Inverter Drive Stage
    1. 3.1  Introduction to UCC217xx-Q1
    2. 3.2  Designing a Traction Inverter Drive System Using UCC217xx-Q1
    3. 3.3  Description of Protection Features
    4. 3.4  Protection Features of UCC217xx-Q1
    5. 3.5  UCC217xx-Q1 Protection and Monitoring Features Descriptions
      1. 3.5.1 Primary and Secondary Side UVLO and OVLO
      2. 3.5.2 Over-Current (OC) and Desaturation (DESAT) Detection
      3. 3.5.3 2-Level and Soft Turn-Off
      4. 3.5.4 Power Switch Gate Voltage (VGE/VGS) Monitoring
      5. 3.5.5 Power Switch Anti-Shoot-Through
      6. 3.5.6 Integrated Internal or External Miller Clamp
      7. 3.5.7 Isolated Analog-to-PWM Channel
      8. 3.5.8 Short-Circuit Clamping
      9. 3.5.9 Active Pulldown
    6. 3.6  Introduction to UCC5870-Q1
    7. 3.7  Designing a Traction Inverter Drive System Using UCC5870-Q1
    8. 3.8  Description of Protection Features
    9. 3.9  Protection Features of UCC5870-Q1
    10. 3.10 UCC5870-Q1 Protection and Monitoring Features Descriptions
      1. 3.10.1  Primary and Secondary Side UVLO and OVLO
      2. 3.10.2  Programmable Desaturation (DESAT) Detection and Over-Current (OC)
      3. 3.10.3  Adjustable 2-Level or Soft Turn-Off
      4. 3.10.4  Active High-Voltage Clamp
      5. 3.10.5  Power Switch Gate Voltage (VGE/VGS) Monitoring
      6. 3.10.6  Gate Threshold Voltage Monitor
      7. 3.10.7  Power Switch Anti-Shoot-Through
      8. 3.10.8  Active Short Circuit (ASC)
      9. 3.10.9  Integrated Internal or External Miller Clamp
      10. 3.10.10 Isolated Analog-to-Digital Converter
        1. 3.10.10.1 Temperature Monitoring of Power Transistor
      11. 3.10.11 Short-Circuit Clamping
      12. 3.10.12 Active and Passive Pulldown
      13. 3.10.13 Thermal Shutdown and Temperature Warning of Driver IC
      14. 3.10.14 Clock Monitor and CRC
      15. 3.10.15 SPI and Register Data Protection
  5. 4Isolated Bias Supply Architecture
  6. 5Summary
  7. 6References
  8. 7Revision History
  9. IMPORTANT NOTICE
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APPLICATION NOTE

HEV/EV Traction Inverter Design Guide Using Isolated IGBT and SiC Gate Drivers

HEV/EV Traction Inverter Design Guide Using Isolated IGBT and SiC Gate Drivers

This document describes how to design a HEV/EV traction inverter drive system using the advantages of TI’s isolated gate drivers diagnostic and protection features.

1 Introduction

Intelligent means of vehicle monitoring and protection are necessary due to the full electrification of vehicles and the stringent safety requirements that vehicle manufacturers are held to. The electronics systems and components must remain functional throughout the vehicle's lifetime in order to maintain safe operation. The traction inverter is vital to the drive system and includes protection and monitoring auxiliary circuits to prevent system-level failure modes such as over- and under-torque, unintentional motor commutation, or motor shutdown. This design guide reviews HEV/EV architectures, the failure modes of the traction inverter system, and how the gate driver and surrounding circuits can be used to enhance the reliability of the system. Texas Instruments’ UCC217xx-Q1 family of reinforced isolated gate drivers have integrated protection and monitoring features that simplify the design of high-power traction inverter systems. This family of drivers is developed under the TI Functional Safety Quality-Managed process. Such features include fast over-current protection or short-circuit protection, isolated temperature and voltage sensing, and under voltage lockout. Additionally, the advanced feature UCC5870-Q1 basic isolated gate driver includes integrated SPI-programmable diagnostic, protection and monitoring functions and is developed under the Functional Safety-Compliant TI process. For more information regarding the categories of TI's safety chips, visit TI's Functional Safety web page.

2 HEV/EV Overview

This section describes the key components of an HEV/EV automotive powertrain system.

 

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