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  • TPS73801-SEP Single-Event Effects (SEE) Test Report

    • SLAK024A January   2019  – March 2024 TPS73801-SEP

       

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  • TPS73801-SEP Single-Event Effects (SEE) Test Report
  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Overview
  5. 2Single-Event Effects
  6. 3Test Device and Evaluation Board Information
  7. 4Irradiation Facility and Setup
  8. 5Test Setup and Procedures
  9. 6Single-Event-Burnout (SEB) and Single-Event-Latch-up (SEL)
    1. 6.1 Single-Event-Burnout (SEB)
    2. 6.2 Single-Event-Latch-up (SEL)
  10. 7SET Results
  11. 8Summary
  12.   A Confidence Interval Calculations
  13.   B References
  14.   C Revision History
  15. IMPORTANT NOTICE
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Radiation Report

TPS73801-SEP Single-Event Effects (SEE) Test Report

Abstract

The effects of heavy-ion irradiation on the single-event effect performance of the TPS73801-SEP LDO regulator is summarized in this report. Heavy ions up to 43MeV-cm2 / mg were used to irradiate production devices in 17 experiments with fluences of 107 ions / cm2. The results show that the TPS73801-SEP is SEL and SEB free up to 43MeV-cm2/mg across the full electrical specification with upper bound cross section on the 10–7 cm2/device. SETs were characterized at VOUT = 2.5V and 12V; and at VIN = 5V and 15V, respectively. Exclusions greater than ±5% around the nominal voltages, were categorized as an upset. For the SET characterization, only seven upsets were observed on the 16 experiments (or runs) and were all at VOUT = 2.5V. The upper bound cross section for the SETs is on the order of 10–8 cm2 / device.

Trademarks

LabVIEW™ is a trademark of National Instruments Corporation.

DuPont® and Kevlar® are registered trademarks of E.I. du Pont de Nemours and Company.

All trademarks are the property of their respective owners.

1 Overview

The TPS73801-SEP is a radiation hardened, 1A, low dropout (LDO) regulator optimized for fast transient response. At a load of 1A, the device typically features 300mV of dropout. In addition to fast transient response, the LDO features low output noise, making the device designed for sensitive RF applications. Quiescent current is well controlled and does not rise in dropout. Additional features of the device are reverse battery and current protection, thermal shutdown, and current limiting. The device is offered in a plastic 6-pin DCQ (SOT-223) package.

General device information and test conditions are listed in Table 1-1. For more detailed technical specifications, EVM user guides, and application notes, please see the TPS73801-SEP product page

Table 1-1 Overview Information (1)
Generic Part NumberTPS73801-SEP
Part NumberTPS73801MDCQTPSEP and TPS73801MDCQPSEP
Device FunctionLow Dropout (LDO) Voltage Regulator
TechnologyJI1-Bipolar
Exposure FacilityRadiation Effects Facility, Cyclotron Institute, Texas A&M University
Heavy-ion Fluence per Run1 × 107 ions / cm2
Irradiation Temperature25°C and 125°C (for SEL testing)
(1) TI may provide technical, applications or design advice, quality characterization, and reliability data or service providing these items shall not expand or otherwise affect TI's warranties as set forth in the Texas Instruments Incorporated Standard Terms and Conditions of Sale for Semiconductor Products and no obligation or liability shall arise from Semiconductor Products and no obligation or liability shall arise from TI's provision of such items.

 

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