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  • OPA4H199-SP Single-Event Effects (SEE) Radiation Report

    • SBOK092 December   2024 OPA4H199-SP

       

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  • OPA4H199-SP Single-Event Effects (SEE) Radiation Report
  1.   1
  2.   2
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A Total Ionizing Dose from SEE Experiments
  15.   B References
  16. IMPORTANT NOTICE
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Radiation Report

OPA4H199-SP Single-Event Effects (SEE) Radiation Report

Abstract

The purpose of this study is to characterize the single-event effects (SEE) performance due to heavy-ion irradiation of the OPA4H199-SP. Heavy-ions with LETEFF of 65 MeV × cm2 / mg were used to irradiate four production devices. Flux of approximately 105 ions/cm2 × s and fluence of 107 ions / cm2 per run were used for the characterization. The results demonstrated that the OPA4H199-SP is SEL-free up to 65 MeV·cm2/ mg at T = 125°C. The output signal, VOUT, (5% window) was monitored to check for transients and SEFIs. The results showed the device is SET free up to 65 MeV × cm2/ mg at T = 25°C.

Trademarks

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1 Introduction

The OPA4H199-SP is a 40V operational amplifier and is optimized for use in a space environment. The device offers exceptional DC precision and AC performance, including rail-to-rail input/output, low offset (±125µV, typ), low offset drift (±0.3µV/°C, typ), low noise (10.8 nV/√Hz and 1.8µVPP), and 4.5MHz bandwidth.

The wide voltage range of the OPA4H199-SP enables the device to be used in low voltage domains, such as 3.3V and 5V, or higher voltage ranges up to 40V. Unique features such as differential and common-mode input voltage range to the supply rail, high output current (±75mA), high slew rate (21V/µs), and high capacitive load drive (1nF) make the OPA4H199-SP a robust, high performance operational amplifier for high-voltage space applications.

The OPA4H199-SP is available in a small-sized, radiation-hardened plastic, 14-pin SOT-23 (DYY) package. The SOT-23 (DYY) package has a body size that is less than 1/5th of the size of traditional 14-pin ceramic packages. The OPA4H199-SP is specified from –55°C to 125°C.

Table 1-1 Overview Information
Description (1) Device Information
TI Part Number OPA4H199-SP
Orderable Number (SMD Number) 5962R2321401PXE
Device Function Operational Amplifier (Op-amp)
Technology LBC9 (Linear BiCMOS 9)
Exposure Facility Radiation Effects Facility, Cyclotron Institute, Texas A&M University
Heavy Ion Fluence per Run 1.00 × 106(SET) – 1.00 × 107 (for SEL and SET) ions / cm2
Irradiation Temperature 25°C (for SET testing) and 125°C (for SEL testing)
(1) TI may provide technical, applications or design advice, quality characterization, and reliability data or service, providing these items shall not expand or otherwise affect TI's warranties as set forth in the Texas Instruments Incorporated Standard Terms and Conditions of Sale for Semiconductor Products and no obligation or liability shall arise from Semiconductor Products and no obligation or liability shall arise from TI's provision of such items.

 
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