The purpose of this study is to characterize the single-event-effects (SEE) performance due to heavy-ion irradiation of the TPS7H2140-SEP. SEE performance was verified at minimum (4.5 V) and maximum (32 V) operating conditions. Heavy-ions at an LETEFF of 48 MeV × cm2 / mg were used to irradiate three production devices and four pre-production devices. Flux of ≈105 ions / cm2 × s and fluences of ≈ 107 ions / cm2 per run were used for the characterization. The results demonstrated that the TPS7H2140-SEP is SEL and SEB/SEGR-free up to 48 MeV × cm2 / mg, at T = 125°C and T = 25°C, respectively, and across the full electrical specifications. SET performance for output voltage excursions ≥ |3%| from the nominal voltage, excursions ≥ |4%| from nominal CS, and negative edge transients on the FAULT pin are discussed in Single-Event Transients (SET).
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The TPS7H2140-SEP is a space-enhanced-plastic, 4.5-V to 32-V input, 5.4-A (1.35-A per channel), quad-channel eFuse. The TPS7H2140-SEP is fully protected with four integrated 160-mΩ (typical) NMOS power FETs. Full diagnostics and high-accuracy current sense enables intelligent control of the loads. An external adjustable current limit improves the reliability of whole system by limiting the inrush overload current.
The device is offered in a 28-pin HTSSOP plastic package. Table 1-1 lists general device information and test conditions. For more detailed technical specifications, user guides, and application notes, see the TPS7H2140-SEP product page.
| Description(1) | Device Information |
|---|---|
| TI part number | TPS7H2140-SEP |
| Orderable number | TPS7H2140MPWPTSEP |
| Device function | Quad-channel eFuse |
| Technology | LBC8 |
| Exposure facility | Radiation effects facility, Cyclotron Institute, Texas A&M University (15 MeV / nucleon) |
| Heavy ion fluence per run | 9.85 × 106 – 1 × 107 ions/cm2 |
| Irradiation temperature | 25°C (for SEB/SEGR testing & SET testing), and 125°C (for SEL testing) |