The LMG3650EVM-113 features two LMG3650R025 650V GaN FETs with an integrated driver and protection in a half-bridge configuration with all the required bias circuit and logic/power level shifting. Essential power stage and gate-driving, high-frequency current loops are fully enclosed on the board to minimize power loop parasitic inductance for reducing voltage overshoots and improving performance. The LMG3650EVM-113 is configured for a socket style external connection for easy interface with external power stages to run the LMG3650R025 in various applications. Refer to the LMG3650R025 data sheet before using this EVM.

• Two TI 650V GaN in TOLL package arranged in half bridge configuration
• Digital isolators for high side fault signal
• Isolated bias supply and bootstrap supply option
• Isolated gate driver and open component positions for layout compatibility to evaluate integrated GaN TOLL and discrete GaN TOLL
• Heat sink with fan attached for heat dissipation during testing
• Fault protection and reporting for over temperature, overcurrent, and short circuit events
• Standard daughter card pinout for compatibility with TI GaN motherboards
• Absolute maximum voltage rating of 650V

• Merchant network and server PSU
• Merchant telecom rectifiers
• Solar inverters and industrial motor drives
• Uninterruptible power supplies