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  • LMP7704-SP Neutron Displacement Damage Characterization

    • SNOK005 October   2024 LMP7704-SP

       

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  • LMP7704-SP Neutron Displacement Damage Characterization
  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Overview
  5. 2Test Procedures
  6. 3Facility
  7. 4Results
    1. 4.1 Input Offset Voltage Parametric Shift
  8. 5Summary of Results
  9.   A Test Results
  10. IMPORTANT NOTICE
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Radiation Report

LMP7704-SP Neutron Displacement Damage Characterization

Abstract

The LMP7704-SP was subjected to a one-time characterization to determine the effects of Neutron Displacement Damage (NDD) to the device parameters. A sample size of twelve units was exposed to radiation testing per MIL-STD-883 (Method 1017 for Neutron Irradiation). The samples were dosed to exposure levels of 1 × 1012 n/cm2, 5 × 1012 n/cm2, and 1 × 1013 n/cm2, with three samples evaluated per exposure level. Electrical testing was performed at Texas Instruments before and after neutron irradiation using the production test program for the device. All tested parameters remained within the data sheet specified limits. Degradation of input offset voltage on some samples was observed and is discussed herein.

Trademarks

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1 Overview

The LMP7704-SP is a precision amplifier with low input bias, low offset voltage, 2.5MHz gain bandwidth, and a wide supply voltage. The device is radiation-hardened and operates in the military temperature range of −55°C to +125°C. The high dc precision of this amplifier, specifically the low offset voltage of ±60μV and ultra-low input bias of ±500fA, make this device an excellent choice for interfacing with precision sensors with high-output impedances. This amplifier can be configured for transducer, bridge, strain gauge, and trans-impedance amplification.

Table 1-1 Overview Information
TI Part Number LMP7704-SP
Device Name 5962R1920601VXC
SMD Number 5962-19206
Device Function Radiation Hardness Assured (RHA), Precision, Low Input Bias, RRIO, Wide Supply Range Amplifiers
Technology VIP050
Device Package 14-pin CFP (HBH)
Unbiased Quantity Tested 12
Exposure Facility VPT Rad, Chelmsford, MA
Neutron Fluence (1-MeV Equivalent) 1.0 × 1012, 5.0 × 1012, 1.0 × 1013 n/cm2
Irradiation Temperature 25°C
TI may provide technical, applications or design advice, quality characterization, and reliability data or service providing these items shall not expand or otherwise affect TI's warranties as set forth in the Texas Instruments Incorporated Standard Terms and Conditions of Sale for Semiconductor Products and no obligation or liability shall arise from Semiconductor Products and no obligation or liability shall arise from TI's provision of such items.

 

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