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This document contains information for the LMK00804B-Q1 (VQFN-16 package) to aid in a functional safety system design. Information provided are:
Figure 1-1 shows the device functional block diagram for reference.
The LMK00804B-Q1 was developed using a quality-managed development process, but was not developed in accordance with the IEC 61508 or ISO 26262 standards.
This section provides functional safety failure in time (FIT) rates for the LMK00804B-Q1 based on two different industry-wide used reliability standards:
FIT IEC TR 62380 / ISO 26262 | FIT (Failures Per 109 Hours) |
---|---|
Total component FIT rate | 8 |
Die FIT rate | 2 |
Package FIT rate | 6 |
The failure rate and mission profile information in Table 2-1 comes from the reliability data handbook IEC TR 62380 / ISO 26262 part 11:
Table | Category | Reference FIT Rate | Reference Virtual TJ |
---|---|---|---|
5 | CMOS/BICMOS ASICs Analog & Mixed =< 50 V supply | 20 FIT | 55°C |
The reference FIT rate and reference virtual TJ (junction temperature) in Table 2-2 come from the Siemens Norm SN 29500-2 tables 1 through 5. Failure rates under operating conditions are calculated from the reference failure rate and virtual junction temperature using conversion information in SN 29500-2 section 4.
The failure mode distribution estimation for the LMK00804B-Q1 in Table 3-1 comes from the combination of common failure modes listed in standards such as IEC 61508 and ISO 26262, the ratio of sub-circuit function size and complexity, and from best engineering judgment.
The failure modes listed in this section reflect random failure events and do not include failures resulting from misuse or overstress.
Die Failure Modes | Failure Mode Distribution (%) |
---|---|
Incorrect input selected | 60 |
Performance degradation of output clocks | 40 |
This section provides a failure mode analysis (FMA) for the pins of the LMK00804B-Q1. The failure modes covered in this document include the typical pin-by-pin failure scenarios:
Table 4-2 through Table 4-5 also indicate how these pin conditions can affect the device as per the failure effects classification in Table 4-1.
Class | Failure Effects |
---|---|
A | Potential device damage that affects functionality. |
B | No device damage, but loss of functionality. |
C | No device damage, but performance degradation. |
D | No device damage, no impact to functionality or performance. |
Figure 4-1 shows the LMK00804B-Q1 pin diagram. For a detailed description of the device pins, see the Pin Configuration and Functions section in the LMK00804B-Q1 data sheet.
Following are the assumptions of use and the device configuration assumed for the pin FMA in this section:
Pin Name | Pin No. | Description of Potential Failure Effect(s) | Failure Effect Class |
---|---|---|---|
GND | 1 | No effect. Normal operation. | D |
NC | 2 | Outputs disabled. | B |
VDD | 3 | Device unpowered. Device not functional. Observe that the absolute maximum ratings for all pins of the device are met, otherwise device damage may be plausible. | A |
CLK_EN | 4 | CLK_EN pulled low. Outputs disabled to logic low state. | B |
CLK_P | 5 | Invalid input clock. No output clocks if CLK_P/N input is selected. | B |
CLK_N | 6 | Invalid input clock. No output clocks if CLK_P/N input is selected. | B |
CLK_SEL | 7 | CLK_SEL pulled low. LVCMOS_CLK selected as input. | B |
LVCMOS_CLK | 8 | Invalid input clock. No output clocks if LVCMOS_CLK input is selected. | B |
GND | 9 | No effect. Normal operation. | D |
Q3 | 10 | Output pulled low. No output clock. Long periods of high current flow through output transistors may cause device damage. | A |
VDDO | 11 | Outputs not functional. | B |
Q2 | 12 | Output pulled low. No output clock. Long periods of high current flow through output transistors may cause device damage. | A |
GND | 13 | No effect. Normal operation. | D |
Q1 | 14 | Output pulled low. No output clock. Long periods of high current flow through output transistors may cause device damage. | A |
VDDO | 15 | Outputs not functional. | B |
Q0 | 16 | Output pulled low. No output clock. Long periods of high current flow through output transistors may cause device damage. | A |
Pin Name | Pin No. | Description of Potential Failure Effect(s) | Failure Effect Class |
---|---|---|---|
GND | 1 | With this pin open, the device has a weaker ground connection than intended by design. Other ground pins maintain connection. Performance degradation possible. | C |
NC | 2 | No effect. Normal operation. | D |
VDD | 3 | Device unpowered. Device not functional. | B |
CLK_EN | 4 | Internally pulled high. Outputs enabled. | D |
CLK_P | 5 | Internally pulled low. No output clock. | B |
CLK_N | 6 | Internally biased to VDD/2 when left floating. Normal operation for single ended input. | D |
CLK_SEL | 7 | Internally pulled high. CLK_P, CLK_N (pins 5, 6) selected. | D |
LVCMOS_CLK | 8 | The internal pulldown resistor ensures a low state when this input is left floating. | B |
GND | 9 | With this pin open, the device has a weaker ground connection than intended by design. Other ground pins maintain connection. Performance degradation possible. | C |
Q3 | 10 | No output. | C |
VDDO | 11 | Outputs not powered. No output. | B |
Q2 | 12 | No output. | C |
GND | 13 | With this pin open, the device has a weaker ground connection than intended by design. Other ground pins maintain connection. Performance degradation possible. | C |
Q1 | 14 | No output. | C |
VDDO | 15 | Outputs not powered. No output. | B |
Q0 | 16 | No output. | C |
Pin Name | Pin No. | Shorted to | Description of Potential Failure Effect(s) | Failure Effect Class |
---|---|---|---|---|
GND | 1 | NC | Outputs disabled. | B |
NC | 2 | VDD | No effect. Normal operation. | D |
VDD | 3 | CLK_EN | Pulled high. Outputs enabled. | D |
CLK_EN | 4 | CLK_P | Not considered. Corner pin. | D |
CLK_P | 5 | CLK_N | Clock input shorted. May create noise on output, if selected. | C |
CLK_N | 6 | CLK_SEL | CLK_N pulled high. Potential duty cycle
distortion. CLK_SEL pulled high. CLK_P, CLK_N (pins 5, 6) selected. |
C |
CLK_SEL | 7 | LVCMOS_CLK | Both pins pulled to Vdd/2. CLK_SEL will randomly selects LVCMOS_CLK or CLK_P/N. | B |
LVCMOS_CLK | 8 | GND | Not considered. Corner pin. | D |
GND | 9 | Q3 | Output pulled low. No output clock. Long periods of high current flow through output transistors may cause device damage. | A |
Q3 | 10 | VDDO | Output pulled high. No output clock. Long periods of high current flow through output transistors may cause device damage. | A |
VDDO | 11 | Q2 | Output pulled high. No output clock. Long periods of high current flow through output transistors may cause device damage. | A |
Q2 | 12 | GND | Not considered. Corner pin. | D |
GND | 13 | Q1 | Output pulled low. No output clock. Long periods of high current flow through output transistors may cause device damage. | A |
Q1 | 14 | VDDO | Output pulled high. No output clock. Long periods of high current flow through output transistors may cause device damage. | A |
VDDO | 15 | Q0 | Output pulled high. No output clock. Long periods of high current flow through output transistors may cause device damage. | A |
Q0 | 16 | GND | Not considered. Corner pin. | D |
Pin Name | Pin No. | Description of Potential Failure Effect(s) | Failure Effect Class |
---|---|---|---|
GND | 1 | Device unpowered. Device not functional. Observe that the absolute maximum ratings for all pins of the device are met, otherwise device damage may be plausible. | A |
NC | 2 | No effect. Normal operation. | D |
VDD | 3 | No effect. Normal operation. | D |
CLK_EN | 4 | Pulled high. Outputs enabled. | D |
CLK_P | 5 | If selected with CLK_SEL, input signal may not be recognized. | B |
CLK_N | 6 | If selected with CLK_SEL, input signal may not be recognized. | B |
CLK_SEL | 7 | Pulled high. CLK_P, CLK_N (pins 5, 6) selected. | D |
LVCMOS_CLK | 8 | If input selected, outputs remain steady low or high. | B |
GND | 9 | Device unpowered. Device not functional. Observe that the absolute maximum ratings for all pins of the device are met, otherwise device damage may be plausible. | A |
Q3 | 10 | Output pulled high. No output clock. Long periods of high current flow through output transistors may cause device damage. | A |
VDDO | 11 | No effect. Normal operation. | D |
Q2 | 12 | Output pulled high. No output clock. Long periods of high current flow through output transistors may cause device damage. | A |
GND | 13 | Device unpowered. Device not functional. Observe that the absolute maximum ratings for all pins of the device are met, otherwise device damage may be plausible. | A |
Q1 | 14 | Output pulled high. No output clock. Long periods of high current flow through output transistors may cause device damage. | A |
VDDO | 15 | No effect. Normal operation. | D |
Q0 | 16 | Output pulled high. No output clock. Long periods of high current flow through output transistors may cause device damage. | A |
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