The purpose of this study is to characterize the single-event effects (SEE) performance due to heavy-ion irradiation of the OPA4H199-SP. Heavy-ions with LETEFF of 65 MeV × cm2 / mg were used to irradiate four production devices. Flux of approximately 105 ions/cm2 × s and fluence of 107 ions / cm2 per run were used for the characterization. The results demonstrated that the OPA4H199-SP is SEL-free up to 65 MeV·cm2/ mg at T = 125°C. The output signal, VOUT, (5% window) was monitored to check for transients and SEFIs. The results showed the device is SET free up to 65 MeV × cm2/ mg at T = 25°C.
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The OPA4H199-SP is a 40V operational amplifier and is optimized for use in a space environment. The device offers exceptional DC precision and AC performance, including rail-to-rail input/output, low offset (±125µV, typ), low offset drift (±0.3µV/°C, typ), low noise (10.8 nV/√Hz and 1.8µVPP), and 4.5MHz bandwidth.
The wide voltage range of the OPA4H199-SP enables the device to be used in low voltage domains, such as 3.3V and 5V, or higher voltage ranges up to 40V. Unique features such as differential and common-mode input voltage range to the supply rail, high output current (±75mA), high slew rate (21V/µs), and high capacitive load drive (1nF) make the OPA4H199-SP a robust, high performance operational amplifier for high-voltage space applications.
The OPA4H199-SP is available in a small-sized, radiation-hardened plastic, 14-pin SOT-23 (DYY) package. The SOT-23 (DYY) package has a body size that is less than 1/5th of the size of traditional 14-pin ceramic packages. The OPA4H199-SP is specified from –55°C to 125°C.
| Description (1) | Device Information |
|---|---|
| TI Part Number | OPA4H199-SP |
| Orderable Number (SMD Number) | 5962R2321401PXE |
| Device Function | Operational Amplifier (Op-amp) |
| Technology | LBC9 (Linear BiCMOS 9) |
| Exposure Facility | Radiation Effects Facility, Cyclotron Institute, Texas A&M University |
| Heavy Ion Fluence per Run | 1.00 × 106(SET) – 1.00 × 107 (for SEL and SET) ions / cm2 |
| Irradiation Temperature | 25°C (for SET testing) and 125°C (for SEL testing) |
The primary concern for the OPA4H199-SP is the robustness against the destructive single-event effects (DSEE): single-event latch-up (SEL). In mixed technologies such as the BiCMOS process used on the OPA4H199-SP, the CMOS circuitry introduces a potential for SEL susceptibility.
SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-sub and n-well and n+ and p+ contacts) [1] [2]. The parasitic bipolar structure initiated by a single-event creates a high-conductance path (inducing a steady-state current that is typically orders-of-magnitude higher than the normal operating current) between power and ground that persists (is latched) until power is removed, the device is reset, or until the device is destroyed by the high-current state. The OPA4H199-SP was tested for SEL at the maximum recommended supply voltage of 40V. The input common-mode voltage (VIN) was set to be equal to the supply voltage during testing. The device was configured as a buffer amplifier with the output pin connected to the inverting input pin. During testing of the devices, the OPA4H199-SP did not exhibit any SEL with heavy-ions with LETEFF = 65MeV × cm2 / mg at flux of approximately 5 × 104 ions / cm2 × s, fluence of approximately 107 ions / cm2, and a die temperature of ~125°C.
Another concern on high reliability and performance applications is the single-events-transient (SET) characteristic of the device. The OPA4H199-SP SET performance was characterized up to LETEFF = 65MeV-cm2 /mg. The device was characterized for SET at supply voltage of 40V under DC input conditions. Test conditions and results are discussed in Table 8-2.