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  • AMC1311x-Q1 Automotive, High-Impedance, 2-V Input, Reinforced Isolated Amplifiers

    • SBAS897C March   2018  – June 2022 AMC1311-Q1

      PRODUCTION DATA  

  • CONTENTS
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  • AMC1311x-Q1 Automotive, High-Impedance, 2-V Input, Reinforced Isolated Amplifiers
  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Related Certifications
    8. 6.8  Safety Limiting Values
    9. 6.9  Electrical Characteristics
    10. 6.10 Switching Characteristics
    11. 6.11 Timing Diagram
    12. 6.12 Insulation Characteristics Curves
    13. 6.13 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Analog Input
      2. 7.3.2 Isolation Channel Signal Transmission
      3. 7.3.3 Analog Output
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Filter Design
        2. 8.2.2.2 Differential to Single-Ended Output Conversion
      3. 8.2.3 Application Curve
    3. 8.3 What To Do and What Not To Do
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information
  13. IMPORTANT NOTICE
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DATA SHEET

AMC1311x-Q1 Automotive, High-Impedance, 2-V Input, Reinforced Isolated Amplifiers

1 Features

  • AEC-Q100 qualified for automotive applications:
    • Temperature grade 1: –40°C to +125°C, TA
  • Functional Safety-Capable
    • Documentation available to aid functional safety system design
  • 2-V, high-impedance input voltage range optimized for isolated voltage measurement
  • Fixed gain: 1
  • Low DC errors:
    • AMC1311-Q1:
      • Offset error: ±9.9 mV (maximum)
      • Offset drift: ±20 µV/°C (typical)
      • Gain error: ±1% (maximum)
      • Gain drift: ±30 ppm/°C (typical)
    • AMC1311B-Q1:
      • Offset error: ±1.5 mV (maximum)
      • Offset drift: ±10 µV/°C (maximum)
      • Gain error: ±0.2% (maximum)
      • Gain drift: ±40 ppm/°C (maximum)
    • Nonlinearity: 0.04% (maximum)
  • 3.3-V operation on high-side (AMC1311B-Q1)
  • High CMTI: 100 kV/μs (AMC1311B-Q1)
  • Missing high-side supply indication
  • Safety-related certifications:
    • 7000-VPK reinforced isolation per DIN EN IEC 60747-17 (VDE 0884-17)
    • 5000-VRMS isolation for 1 minute per UL1577

2 Applications

  • Isolated voltage sensing in:
    • Traction inverters
    • Onboard chargers
    • DC/DC converters

3 Description

The AMC1311-Q1 is a precision, isolated amplifier with an output separated from the input circuitry by a capacitive isolation barrier that is highly resistant to magnetic interference. This barrier is certified to provide reinforced galvanic isolation of up to 5 kVRMS according to DIN EN IEC 60747-17 (VDE 0884-17) and UL1577 and supports a working voltage of up to 1500 VRMS.

The isolation barrier separates parts of the system that operate on different common-mode voltage levels and protects the low-voltage side from voltages that can cause electrical damage or be harmful to an operator.

The high-impedance input of the AMC1311-Q1 is optimized for connection to high-impedance resistive dividers or any other high-impedance voltage signal source. The excellent DC accuracy and low temperature drift support accurate, isolated voltage sensing and control in closed-loop systems. The integrated missing high-side supply voltage detection feature simplifies system-level design and diagnostics.

The AMC1311-Q1 is offered with two performance grade options: AMC1311-Q1 and AMC1311B-Q1.

Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
AMC1311-Q1 SOIC (8) 5.85 mm × 7.50 mm
AMC1311B-Q1
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Simplified Schematic

4 Revision History

Changes from Revision B (May 2020) to Revision C (June 2022)

  • Changed Features sectionGo
  • Changed isolation standard from DIN VDE V 0884-11 (VDE V 0884-11) to DIN EN IEC 60747-17 (VDE 0884-17) and updated the Insulation Specifications and Safety-Related Certifications tables accordinglyGo
  • Changed Description sectionGo
  • Changed pin names: VIN to IN, VOUTP to OUTP, and VOUTN to OUTNGo
  • Merged VOS specs for 4.5V ≤ VDD1 ≤ 5.5 V and 3.0 V ≤ VDD1 ≤ 5.5 V ranges (AMC1311B-Q1 only)Go
  • Changed VDD1 DC PSRR from –65 dB (typical) to –80 dB (typical)Go
  • Changed CMTI from 75 kV/µs (minimum), 140 kV/µs (typical) to 100 kV/µs (minimum), 150kV/µs (typical) (AMC1311B-Q1 only)Go
  • Changed VDD1UV (VDD1 falling) from 1.75 V / 2.53 V / 2.7 V to 2.4 V / 2.6 V / 2.8 V (minimum / typical / maximum)Go
  • Changed Rise, Fall, and Delay Time Definition timing diagramGo
  • Changed Reinforced Isolation Capacitor Lifetime Projection figure Go
  • Deleted histogram plots from Typical Characteristics sectionGo
  • Changed Overview sectionGo
  • Changed functional block diagramGo
  • Changed the Analog Input sectionGo
  • Changed Isolation Channel Signal Transmission sectionGo
  • Deleted Fail-Safe Output section, added Analog Output sectionGo
  • Changed Application Information section for clarityGo
  • Changed Typical Application section and subsectionsGo
  • Changed Design Requirements tableGo
  • Changed Detailed Design Procedure sectionGo
  • Added Input Filter Design sectionGo
  • Added Differential to Single-Ended Output Conversion sectionGo
  • Changed Step Response of the AMC1311B-Q1 figureGo
  • Changed Application Curve sectionGo
  • Changed What To Do and What Not To Do sectionGo
  • Changed Power Supply Recommendations sectionGo
  • Changed Layout sectionGo
  • Changed Layout Guidelines sectionGo
  • Changed recommended layout drawingGo

Changes from Revision A (June 2018) to Revision B (May 2020)

  • Changed automotive-specific Features bullets Go
  • Added Functional Safety-Capable bullets to Features list. Go
  • Changed AMC1311B-Q1 offset drift from ±15 µV/°C (max) to 10 µV/°C (max) in Features sectionGo
  • Changed AMC1311B-Q1 gain error from ±0.3% (max) to ±0.2% (max) and changed AMC1311B-Q1 gain drift from ±45 ppm/°C (max) to ±40 ppm/°C (max) in Features sectionGo
  • Changed AMC1311B-Q1 values for TCVOS, EG, and TCEG in Device Comparison Table Go
  • Added ESD classification levels to ESD Ratings tableGo
  • Changed CLR and CPG values from 9 mm to 8.5 mmGo
  • Changed Insulation Specifications table per ISO standardGo
  • Changed Safety-Related Certification table per ISO standardGo
  • Changed Safety Limiting Values description as per ISO standardGo
  • Changed TCVOS parameter minimum value from –15 μV/°C to –10 μV/°C and maximum value from 15 μV/°C to 10μV/°C for the AMC1311B-Q1 in the Electrical Characteristics tableGo
  • Changed EG parameter minimum value from –0.3% to –0.2% and maximum value from 0.3% to 0.2% for the AMC1311B-Q1 in the Electrical Characteristics tableGo
  • Changed TCEG parameter minimum value from –45 ppm/°C to –40 ppm/°C and maximum value from 45 ppm/°C to 40 ppm/°C for the AMC1311B-Q1 in the Electrical Characteristics tableGo
  • Changed Step Response of the AMC1311B-Q1 figureGo
  • Changed Step Response of the AMC1311-Q1 figureGo

5 Pin Configuration and Functions

Figure 5-1 DWV Package,8-Pin SOIC(Top View)
Table 5-1 Pin Functions
PINTYPEDESCRIPTION
NO.NAME
1VDD1High-side powerHigh-side power supply(1)
2INAnalog inputAnalog input
3SHTDNDigital inputShutdown input, active high, with internal pullup resistor (typical value: 100 kΩ)
4GND1High-side groundHigh-side analog ground
5GND2Low-side groundLow-side analog ground
6OUTNAnalog outputInverting analog output
7OUTPAnalog outputNoninverting analog output
8VDD2Low-side powerLow-side power supply(1)
(1) See the Section 9 section for power-supply decoupling recommendations.

6 Specifications

6.1 Absolute Maximum Ratings

see(1)
MIN MAX UNIT
Power-supply voltage High-side VDD1 to GND1 –0.3 6.5 V
Low-side VDD2 to GND2 –0.3 6.5
Input voltage IN GND1 – 6 VDD1 + 0.5 V
SHTDN GND1 – 0.5 VDD1 + 0.5
Output voltage OUTP, OUTN GND2 – 0.5 VDD2 + 0.5 V
Input current Continuous, any pin except power-supply pins –10 10 mA
Temperature Junction, TJ 150 °C
Storage, Tstg –65 150
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under  Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1), HBM ESD classification Level 2 ±2000 V
Charged-device model (CDM), per AEC Q100-011, CDM ESD classification Level C6 ±1000
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

over operating ambient temperature range (unless otherwise noted)
MIN NOM MAX UNIT
POWER SUPPLY
High-side power supply VDD1 to GND1, AMC1311-Q1 4.5 5 5.5 V
VDD1 to GND1, AMC1311B-Q1 3 5 5.5
Low-side power supply VDD2 to GND2 3 3.3 5.5 V
ANALOG INPUT
VClipping Input voltage before clipping output IN to GND1 2.516 V
VFSR Specified linear full-scale voltage IN to GND1 –0.1 2 V
ANALOG OUTPUT
CLOAD Capacitive load On OUTP or OUTN to GND2 500 pF
OUTP to OUTN 250
RLOAD Resistive load On OUTP or OUTN to GND2 10 1 kΩ
DIGITAL INPUT
Input voltage SHTDN to GND1 0 VDD1 V
TEMPERATURE RANGE
TA Specified ambient temperature –40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) DWV (SOIC) UNIT
8 PINS
RθJA Junction-to-ambient thermal resistance 84.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 28.3 °C/W
RθJB Junction-to-board thermal resistance 41.1 °C/W
ΨJT Junction-to-top characterization parameter 4.9 °C/W
ΨJB Junction-to-board characterization parameter 39.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance n/a °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Power Ratings

PARAMETER TEST CONDITIONS VALUE UNIT
PD Maximum power dissipation (both sides) VDD1 = VDD2 = 5.5 V 98 mW
VDD1 = VDD2 = 3.6V, AMC1311B-Q1 only 56
PD1 Maximum power dissipation (high-side) VDD1 = 5.5 V 53 mW
VDD1 = 3.6 V, AMC1311B-Q1 only 30
PD2 Maximum power dissipation (low-side) VDD2 = 5.5 V 45 mW
VDD2 = 3.6 V, AMC1311B-Q1 only 26

 
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